Packaged microelectronic elements having blind vias for heat dissipation

Abstract

System and method for thermal management in a multi-chip packaged device. A microelectronic unit is disclosed, and includes a semiconductor element having a top surface and a bottom surface remote from the top surface. A semiconductor device including active elements is located adjacent to the top surface. Operation of the semiconductor device generates heat. Additionally, one or more first blind vias extend from the bottom surface and partially into a thickness of the semiconductor element. In that manner, the blind via does not contact or extend to the semiconductor device (defined as active regions of the semiconductor element, and moreover, is electrically isolated from the semiconductor device. A thermally conductive material fills the one or more first blind vias for heat dissipation. Specifically, heat generated by the semiconductor device thermally conducts from the semiconductor element, and is further distributed, transferred and/or dissipated through the one or more first blind vias to other connecting components.

What is claimed: 
     
         1 . An apparatus for a microelectronic device, comprising:
 a semiconductor element having a top surface and a bottom surface opposite the top surface;   a semiconductor device having an active region above the top surface; and   blind vias in the semiconductor element directly below the active region formed to include thermally conductive material for dissipation of heat to be generated in the active region without direct contact of the blind vias and the active region, the blind vias extending from or near the bottom surface partially into a thickness of the semiconductor element toward the active region for transfer of heat away from the active region.   
     
     
         2 . The apparatus according to  claim 1 , further comprising electrically conductive material structures in contact with the thermally conductive material of the blind vias and configured to have adjacent portions thereof interconnected to one another to provide a mesh structure. 
     
     
         3 . The apparatus according to  claim 2 , wherein:
 the semiconductor device is a memory device; and   the semiconductor element is a silicon substrate.   
     
     
         4 . The apparatus according to  claim 1 , wherein the blind vias and the thermally conductive material thereof respectively are first blind vias and first thermally conductive material, the apparatus further comprising:
 a dielectric layer above the semiconductor device; and   second blind vias in the dielectric layer directly above the active region including second thermally conductive material for dissipation of heat to be generated in the active region without direct contact of the second blind vias and the active region, the second blind vias extending from or near a top surface of the dielectric layer partially into a thickness of the dielectric layer toward the active region for transfer of heat away from the active region.   
     
     
         5 . The apparatus according to  claim 4 , further comprising:
 first electrically conductive material structures in contact with the first thermally conductive material of the first blind vias and configured to have adjacent portions thereof interconnected to one another to provide a first mesh structure; and   second electrically conductive material structures in contact with the second thermally conductive material of the second blind vias and configured to have adjacent portions thereof interconnected to one another to provide a second mesh structure.   
     
     
         6 . The apparatus according to  claim 4 , wherein:
 the semiconductor element and the semiconductor device respectively are a first semiconductor element and a first semiconductor device;   the active region is a first active region; and   the top surface and the bottom surface respectively are a first top surface and a first bottom surface;   the apparatus further comprising:
 a second semiconductor element having a second top surface and a second bottom surface; 
 a second semiconductor device having a second active region above the second top surface; 
 third blind vias directly below the second active region formed to include third thermally conductive material for dissipation of heat to be generated in the second active region without direct contact of the third blind vias and the second active region, the third blind vias extending from or near the second bottom surface partially into a thickness of the second semiconductor element toward the second active region for transfer of heat away from the second active region; and 
 a mesh structure coupled to and between the second blind vias and the third blind vias. 
   
     
     
         7 . The apparatus according to  claim 6 , wherein the mesh structure comprises electrically conductive material structures in contact with the second thermally conductive material and the third thermally conductive material and configured to have adjacent portions thereof interconnected to one another to provide the mesh structure. 
     
     
         8 . An apparatus for a microelectronic device, comprising:
 a semiconductor element having a top surface and a bottom surface opposite the top surface;   a semiconductor device having an active region formed in an upper portion of the semiconductor element; and   blind vias in the semiconductor element directly below the active region including thermally conductive material for dissipation of heat to be generated in the active region without direct contact of the blind vias and the active region, the blind vias extending from or near the bottom surface partially into a thickness of the semiconductor element toward the active region for transfer of heat away from the active region.   
     
     
         9 . The apparatus according to  claim 8 , further comprising electrically conductive material structures in contact with the thermally conductive material of the blind vias and configured to have adjacent portions thereof interconnected to one another to provide a mesh structure. 
     
     
         10 . The apparatus according to  claim 9 , wherein:
 the semiconductor device is a memory device; and   the semiconductor element is a silicon substrate.   
     
     
         11 . The apparatus according to  claim 8 , wherein the blind vias and the thermally conductive material thereof respectively are first blind vias and first thermally conductive material, the apparatus further comprising:
 a dielectric layer above the semiconductor device; and   second blind vias in the dielectric layer directly above the active region including second thermally conductive material for dissipation of heat to be generated in the active region without direct contact of the second blind vias and the active region, the second blind vias extending from or near a top surface of the dielectric layer partially into a thickness of the dielectric layer toward the active region for transfer of heat away from the active region.   
     
     
         12 . The apparatus according to  claim 11 , further comprising:
 first electrically conductive material structures in contact with the first thermally conductive material of the first blind vias and configured to have adjacent portions thereof interconnected to one another to provide a first mesh structure; and   second electrically conductive material structures in contact with the second thermally conductive material of the second blind vias and configured to have adjacent portions thereof interconnected to one another to provide a second mesh structure.   
     
     
         13 . The apparatus according to  claim 11 , wherein:
 the semiconductor element and the semiconductor device respectively are a first semiconductor element and a first semiconductor device;   the active region is a first active region; and   the top surface and the bottom surface respectively are a first top surface and a first bottom surface;   the apparatus further comprising:
 a second semiconductor element having a second top surface and a second bottom surface; 
 a second semiconductor device having a second active region formed in an upper portion of the second semiconductor element; 
 third blind vias directly below the second active region formed to include third thermally conductive material for dissipation of heat to be generated in the second active region without direct contact of the third blind vias and the second active region, the third blind vias extending from or near the second bottom surface partially into a thickness of the second semiconductor element toward the second active region for transfer of heat away from the second active region; and 
 a mesh structure coupled to and between the second blind vias and the third blind vias. 
   
     
     
         14 . The apparatus according to  claim 13 , wherein the mesh structure comprises electrically conductive material structures in contact with the second thermally conductive material and the third thermally conductive material and configured to have adjacent portions thereof interconnected to one another to provide the mesh structure. 
     
     
         15 . A method for a microelectronic device, comprising:
 obtaining a semiconductor element having a top surface and a bottom surface opposite the top surface;   disposing a semiconductor device having an active region above the top surface; and   forming blind vias in the semiconductor element directly below the active region to include thermally conductive material for dissipation of heat to be generated in the active region without direct contact of the blind vias and the active region, the blind vias extending from or near the bottom surface partially into a thickness of the semiconductor element toward the active region for transfer of heat away from the active region.   
     
     
         16 . The method according to  claim 15 , further comprising forming electrically conductive material structures in contact with the thermally conductive material of the blind vias and configured to have adjacent portions thereof interconnected to one another to provide a mesh structure. 
     
     
         17 . The method according to  claim 15 , wherein the blind vias and the thermally conductive material thereof respectively are first blind vias and first thermally conductive material, the method further comprising:
 forming a dielectric layer above the semiconductor device; and   forming second blind vias in the dielectric layer directly above the active region to include second thermally conductive material for dissipation of heat to be generated in the active region without direct contact of the second blind vias and the active region, the second blind vias extending from or near a top surface of the dielectric layer partially into a thickness of the dielectric layer toward the active region for transfer of heat away from the active region.   
     
     
         18 . The method according to  claim 17 , further comprising:
 forming first electrically conductive material structures in contact with the first thermally conductive material of the first blind vias and configured to have adjacent portions thereof interconnected to one another to provide a first mesh structure; and   forming second electrically conductive material structures in contact with the second thermally conductive material of the second blind vias and configured to have adjacent portions thereof interconnected to one another to provide a second mesh structure.   
     
     
         19 . The method according to  claim 17 , wherein:
 the semiconductor element and the semiconductor device respectively are a first semiconductor element and a first semiconductor device;   the active region is a first active region; and   the top surface and the bottom surface respectively are a first top surface and a first bottom surface;   the method further comprising:
 obtaining a second semiconductor element having a second top surface and a second bottom surface; 
 disposing a second semiconductor device having a second active region above the second top surface; 
 forming third blind vias directly below the second active region to include third thermally conductive material for dissipation of heat to be generated in the second active region without direct contact of the third blind vias and the second active region, the third blind vias extending from or near the second bottom surface partially into a thickness of the second semiconductor element toward the second active region for transfer of heat away from the second active region; 
 forming a mesh structure coupled to either the second blind vias or the third blind vias; and 
 coupling the mesh structure to either the second blind vias or the third blind vias not previously coupled thereto. 
   
     
     
         20 . The method according to  claim 19 , wherein the forming of the mesh structure comprises forming electrically conductive material structures in contact with either the second thermally conductive material or the third thermally conductive material and configured to have adjacent portions thereof interconnected to one another to provide the mesh structure.