US2017140975A1PendingUtilityA1

Spin head, apparatus and method for treating a substrate including the spin head

Assignee: SEMES CO LTDPriority: Nov 17, 2015Filed: Nov 15, 2016Published: May 18, 2017
Est. expiryNov 17, 2035(~9.3 yrs left)· nominal 20-yr term from priority
H10P 72/7616H10P 72/7608H10P 72/0414H10P 72/0411H10P 72/7614H10P 72/0448H10P 72/0404H10P 72/7606B08B 3/04H01L 21/6875H01L 21/6704
43
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Claims

Abstract

The present disclosure relates to a spin head, apparatus and method for treating a substrate including the spin head. The spin head includes a supporting plate where a substrate is placed and a chuck pin placed on the supporting plate and supporting a lateral portion of the substrate, wherein the chuck pin includes an outer body and an inner body inserted in the outer body and provided with a different material from the outer body, wherein each outer body and the inner body is provided with any one of a first material or a second material, and wherein one material of the first material and the second material is provided with a material having lower heat conductivity and better thermal resistance than another one

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A spin head for supporting a substrate comprising:
 a supporting plate on which a substrate is placed; and   a chuck pin provided in the supporting plate for supporting a lateral portion of the substrate;   wherein the chuck pin comprises an outer body and an inner body inserted into the outer body,   the inner body is provided with a material different from the outer body,   the outer body and the inner body are provided with any one of a first material or a second material, respectively, and   one of the first material and the second material has a lower heat conductivity and a better thermal resistance than the other of the first material and the second material.   
     
     
         2 . The spin head for supporting the substrate of  claim 1 , wherein the first material comprises a ceramic material and the second material is provided with a resin material. 
     
     
         3 . The spin head for supporting the substrate of  claim 2 , wherein the ceramic material comprises a silicon carbide and the resin material is provided with a perfluoralkoxy (PFA). 
     
     
         4 . The spin head for supporting the substrate of  claim 1 , wherein a groove is formed in a lateral portion of the outer body and an end of the substrate is contacted with the groove, and the inner body is provided with a rod shape. 
     
     
         5 . The spin head for supporting the substrate of  claim 4 , wherein the outer body is provided to surround a lateral portion and a top of the inner body. 
     
     
         6 . The spin head for supporting the substrate of  claim 3 , wherein the outer body is provided to surround a lateral portion of the inner body and a top of the inner body is higher in level than a top of the outer body. 
     
     
         7 . The spin head for supporting the substrate of  claim 5 , wherein a bottom of the inner body is positioned inner side of the outer body. 
     
     
         8 . The spin head for supporting the substrate of  claim 5 , wherein the bottom of the inner body is provided to protrude to outside of the outer body. 
     
     
         9 . The spin head for supporting the substrate of  claim 5 , wherein the spin head further comprises a chuck rod coupled with the chuck pin and positioned inner side of the supporting plate and a chuck pin driver for driving the chuck rod, and wherein the chuck rod is provided with a metal material. 
     
     
         10 . The spin head for supporting the substrate of  claim 1 , wherein the outer body is provided with the first material and the inner body is provided with the second material. 
     
     
         11 . The spin head for supporting the substrate of  claim 1 , wherein the outer body is provided with the second material and the inner body is provided with the first material. 
     
     
         12 . A spin head for supporting a substrate comprising:
 a supporting plate on which a substrate is placed; and   a supporting pin provided in the supporting plate for supporting a bottom of the substrate,   wherein the supporting pin comprises a first body and a second body provided with a different material from the first body, the first body and the second body is provided with any one of a first material or a second material, respectively, and one of the first material and the second material is provided with a material having lower heat conductivity and a better thermal resistance than the other of the first material and the second material.   
     
     
         13 . The spin head for supporting the substrate of  claim 12 , wherein the first material comprises a ceramic material and the second material is provided with a resin material. 
     
     
         14 . The spin head for supporting the substrate of  claim 13 , wherein the ceramic material comprises a silicon carbide and the resin material is provided with a perfluoralkoxy (PFA). 
     
     
         15 . The spin head supporting the substrate of  claim 12 , wherein a top of the first body is contacted with a bottom of the substrate and the second body is coupled to a bottom of the first body. 
     
     
         16 . The spin head for supporting the substrate of  claim 13 , wherein the first body is provided to surround a lateral portion and a top of the second body and the second is provided with a rod shape. 
     
     
         17 . The spin head for supporting the substrate of  claim 12 , wherein the first body is provided with the first material and the second body is provided with the second material. 
     
     
         18 . The spin head for supporting the substrate of  claim 12 , wherein the first body is provided with the second material and the second body is provided with the first material. 
     
     
         19 . An apparatus for treating a substrate comprising:
 a first chamber for treating the substrate by supplying a first treatment liquid; and   a second chamber for treating the substrate by supplying a second treatment liquid;   wherein the first chamber comprises a first spin head comprising a first chuck pin for supporting the substrate at a lateral portion of the substrate and a first ejection unit for supplying the first treatment liquid to the substrate placed on the first spin head,   wherein the second chamber comprises a second spin head comprising a second chuck pin for supporting the substrate from a lateral portion of the substrate and a second ejection unit for supplying the second treatment liquid to the substrate placed on the second spin head,   wherein the first chuck pin comprises a first outer body and a first inner body provided with a different material from each other,   wherein the second chuck pin comprises a second outer body and a second inner body provided with a different material from each other, and   wherein a correlation between the first outer body and the first inner body is provided differently from a correlation between the second outer body and the second inner body.   
     
     
         20 . The apparatus for treating a substrate of  claim 19 , wherein the correlation comprises a ratio of a cross sectional area between the outer body and the inner body. 
     
     
         21 . The apparatus for treating a substrate of  claim 19 , wherein the correlation comprises a ratio of a length between the outer body and the inner body. 
     
     
         22 . The apparatus for treating a substrate of  claim 19 , wherein the correlation comprises whether or not the inner body protrudes outside of the outer body. 
     
     
         23 . The apparatus for treating a substrate of  claim 19 , wherein the correlation comprises what material the outer body and the inner body are provided with. 
     
     
         24 . The apparatus for treating a substrate of  claim 19 , wherein the correlation comprises what material the outer body and the inner body are provided with, wherein both of the first outer body and the second inner body are provided with one of the first material and the second material, and both of the second outer body and the first inner body are provided with the other of the first material and the second material, and wherein one of the first material and the second material is provided with a material having lower heat conductivity and a better thermal resistance than the other of the first material and the second material. 
     
     
         25 . The apparatus for treating a substrate of  claim 24 , wherein the first material comprises a ceramic material and the second material is provided with a resin material. 
     
     
         26 . The apparatus for treating a substrate of  claim 25 , wherein the ceramic material comprises a silicon carbide and the resin material is provided with a perfluoralkoxy (PFA). 
     
     
         27 . The apparatus for treating a substrate of  claim 24 , wherein the first outer body has a first groove at a lateral portion thereof and an end of the substrate is contacted with the first groove, wherein the first inner body is provided with a rod shape, the second outer body has a second groove at a lateral portion thereof and an end of the substrate is contacted with the second groove, wherein the second inner body is provided with a rod shape. 
     
     
         28 . The apparatus for treating a substrate of  claim 24 , wherein the first outer body is provided to surround a lateral portion and top of the first inner body and the second outer body is provided to surround a lateral portion and top of the second inner body. 
     
     
         29 . The apparatus for treating a substrate of  claim 24 , wherein the first outer body is provided to surround a lateral portion of the first inner body, wherein a top of the first inner body is higher in level than a top of the first outer body, wherein the second outer body is provided to surround a lateral portion of the second inner body, and wherein a top of the second inner body is higher in level than a top of the second outer body. 
     
     
         30 . The apparatus for treating a substrate of  claim 23 , wherein the first outer body and the second inner body are provided with the first material and wherein the second outer body and the first inner body are provided with the second material. 
     
     
         31 . The apparatus for treating a substrate of  claim 23 , wherein the first outer body and the second inner body are provided with the second material and wherein the second outer body and the first inner body are provided with the first material. 
     
     
         32 . The apparatus for treating a substrate of  claim 19 , wherein the first spin head further comprises a first supporting pin for supporting the substrate at the bottom of the substrate, wherein the second spin head further comprises a second supporting pin for supporting the substrate at the bottom of the substrate, wherein the second supporting pin comprises a first body and a second body provided with a different material from each other, wherein each of the first body and the second body is provided with any one of a first material or a second material, and wherein one of the first material and the second material is provided with a material having a lower heat conductivity and a better thermal resistance than the other of the first material and the second material. 
     
     
         33 . The apparatus for treating a substrate of  claim 32 , wherein the first material comprises a ceramic material and the second material is provided with a resin material. 
     
     
         34 . The apparatus for treating a substrate of  claim 33 , wherein the ceramic material comprises a silicon carbide and the resin material is provided with a perfluoralkoxy (PFA). 
     
     
         35 . The apparatus for treating a substrate of  claim 32 , wherein a top of the first body is contacted with a bottom of the substrate and the second body is coupled to a bottom of the first body. 
     
     
         36 . The apparatus for treating a substrate of  claim 32 , wherein the first body is provided to surround a lateral portion and top of the second body and wherein the second body is provided with a rod shape. 
     
     
         37 . The apparatus for treating a substrate of  claim 32 , wherein the first body is provided with the first material and the second body is provided with the second material. 
     
     
         38 . The apparatus for treating a substrate of  claim 32 , wherein the first body is provided with the second material and the second body is provided with the first material. 
     
     
         39 . The apparatus for treating a substrate of  claim 19 , further comprising a first apparatus for treating a substrate and a second apparatus for treating a substrate,
 wherein the first apparatus for treating a substrate comprises a first index module and a first process treating module, the first index module comprising a first load port on which a container containing the substrate is placed and a first index robot for transferring the substrate to the first load port, and the first process treating module comprising a plurality of a first process chambers for treating the substrate and a first transfer unit for transferring the substrate to the first process chambers,   wherein the second apparatus for treating a substrate comprises a second index module and a second process treating module, the second index module comprising a second load port on which a container containing the substrate is placed and a second index robot for transferring the substrate to the second load port, and the second process treating module comprising a plurality of a second process chambers for treating the substrate and a second transfer unit for transferring the substrate to the second process chambers,   wherein the first process chamber comprises the first chamber, and   wherein the second process chamber comprises the second chamber.   
     
     
         40 . The apparatus for treating a substrate of  claim 19 , further comprising a first apparatus for treating a substrate and a second apparatus for treating a substrate,
 wherein the first apparatus for treating a substrate comprises a first index module and a first process treating module, the first index module comprising a first load port on which a container containing the substrate is placed and a first index robot for transferring the substrate to the first load port, and the first process treating module comprising a plurality of a first process chambers for treating the substrate and a first transfer unit for transferring the substrate to the first process chambers,   wherein the second apparatus for treating a substrate comprises a second index module and a second process treating module, the second index module comprising a second load port on which a container containing the substrate is placed and a second index robot for transferring the substrate to the second load port, and the second process treating module comprising a plurality of a second process chambers for treating the substrate and a second transfer unit for transferring the substrate to the second process chambers,   wherein the first process chamber comprises the first chamber and the second chamber.   
     
     
         41 . The apparatus for treating a substrate of  claim 39 , wherein a temperature of the first treatment liquid is higher than a temperature of the second treatment liquid. 
     
     
         42 . The apparatus for treating a substrate of  claim 39 , wherein the first apparatus for treating a substrate comprises a heating unit heating the substrate and positioned in the first spin head. 
     
     
         43 . The apparatus for treating a substrate of  claim 39 , further comprising a controller for controlling the first transfer unit and the second transfer unit, wherein the controller controls the first transfer unit so that the substrate is supported by the first chuck pin when treating the substrate with the first treatment liquid and the controller controls the second transfer unit so that the substrate is supported by the second chuck pin when treating the substrate with the second treatment liquid. 
     
     
         44 . A method for treating a substrate using the apparatus for treating a substrate of  claim 20 , the method comprising: treating the substrate which is supported by the first chuck pin by supplying the first treatment liquid and treating the substrate which is supported by the second chuck pin by supplying the second treatment liquid. 
     
     
         45 . The method of  claim 44 , wherein the first treatment liquid is provided with higher temperature than the second treatment liquid. 
     
     
         46 . The method of  claim 45 , wherein the first treatment liquid comprises an acid and wherein the second treatment liquid comprises a sulfuric acid. 
     
     
         47 . The method of  claim 44 , wherein the second spin head further comprises a second supporting pin for supporting the substrate at the bottom of the substrate, wherein the second supporting pin comprises a first body of a first material and a second body of a second material, and wherein one of the first material and the second material is provided with a material having a lower heat conductivity and a better thermal resistance than the other of the first material and the second material.

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