Apparatus for monitoring pulsed high-frequency power and substrate processing apparatus including the same

Abstract

Disclosed are an apparatus for monitoring pulsed high-frequency power and a substrate processing apparatus including the same. The apparatus includes an attenuation module configured to attenuate a pulsed high-frequency power signal; a rectifier module configured to convert the pulsed high-frequency power signal into a direct current signal; and a detection module configured to detect a pulse parameter based on the direct current signal.

1 . An apparatus for monitoring pulsed high-frequency power, the apparatus comprising:
 a rectifier module configured to convert a pulsed high-frequency power signal into a direct current signal; and   a detection module configured to detect a pulse parameter based on the direct current signal.   
     
     
         2 . The apparatus of  claim 1 , further comprising an attenuation module configured to attenuate the pulsed high-frequency power signal,
 wherein the rectifier module converts a high-frequency power signal attenuated by the attenuation module into a direct current signal.   
     
     
         3 . The apparatus of  claim 1 , wherein the pulse parameter comprises at least one of a pulse frequency, a pulse duty ratio and a pulse phase of the direct current signal. 
     
     
         4 . The apparatus of  claim 1 , wherein the detection module comprises:
 a differentiator configured to differentiate the direct current signal; and   an edge detection unit configured to detect an edge of the direct current signal based on a differentiation value obtained by differentiating the direct current signal through the differentiator.   
     
     
         5 . The apparatus of  claim 4 , wherein the edge detection unit comprises:
 a rising edge detection unit configured to detect a rising edge of the direct current signal; and   a falling edge detection unit configured to detect a falling edge of the direct current signal.   
     
     
         6 . The apparatus of  claim 5 , wherein the detection module further comprises a pulse frequency calculation unit configured to calculate a pulse frequency of the direct current signal based on at least two continuous rising edge signals detected by the rising edge detection unit. 
     
     
         7 . The apparatus of  claim 5 , wherein the detection module further comprises a pulse duty ratio calculation unit configured to calculate a pulse duty ratio of the direct current signal based on the rising and falling edge signals sequentially detected by the rising and falling edge detection units. 
     
     
         8 . The apparatus of  claim 4 , wherein the detection module further comprises a pulse phase calculation unit configured to calculate a phase by comparing edge signals detected by the edge detection unit with one another when a plurality of direct current signals are applied to the detection module. 
     
     
         9 . The apparatus of  claim 2 , wherein the attenuation module attenuates the pulsed high-frequency power signal such that the pulsed high-frequency power signal is in a range of 0 V to 10 V. 
     
     
         10 . An apparatus for processing a substrate, the apparatus comprising:
 a high-frequency power source configured to provide at least one high-frequency power;   a pulse input unit configured to apply an ON/OFF pulse to the high-frequency power source to pulse the high-frequency power;   a chamber comprising a plasma source configured to generate plasma by using the pulsed high-frequency power;   an impedance matching unit connected between the high-frequency power source and the chamber to perform impedance matching;   an attenuation module disposed on an outside of the chamber to attenuate a pulsed high-frequency power signal which is applied to the chamber;   a rectifier module configured to convert a high-frequency power signal attenuated by the attenuation module into a direct current signal; and   a detection module configured to detect a pulse parameter based on the direct current signal.   
     
     
         11 . The apparatus of  claim 10 , wherein the pulse parameter comprises at least one of a pulse frequency, a pulse duty ratio and a pulse phase of the direct current signal. 
     
     
         12 . The apparatus of  claim 10 , wherein the attenuation module is disposed between the chamber and the impedance matching unit or between the high-frequency power source and the impedance matching unit. 
     
     
         13 . The apparatus of  claim 10 , wherein the detection module comprises:
 a differentiator configured to differentiate the direct current signal; and   an edge detection unit configured to detect an edge of the direct current signal based on a differentiation value obtained by differentiating the direct current signal through the differentiator.   
     
     
         14 . The apparatus of  claim 13 , wherein the edge detection unit comprises:
 a rising edge detection unit configured to detect a rising edge of the direct current signal; and   a falling edge detection unit configured to detect a falling edge of the direct current signal.   
     
     
         15 . A method of monitoring pulsed high-frequency power, the method comprising:
 differentiating a direct current signal of the pulsed high-frequency power;   detecting an edge signal of the direct current signal of the pulsed high-frequency power based on a differentiation value of the differentiated direct current signal; and   calculating a pulse parameter of the direct current of the pulsed high-frequency power based on the detected edge signal.   
     
     
         16 . The method of  claim 15 , wherein the detecting of the edge signal comprises:
 detecting a rising edge signal of the direct current signal of the pulsed high-frequency power; and   detecting a falling edge signal of the direct current signal of the pulsed high-frequency power.   
     
     
         17 . The method of  claim 16 , wherein the calculating of the pulse parameter comprises calculating a pulse frequency of the direct current signal based on at least two continuous rising edge signals of the rising edge signals. 
     
     
         18 . The method of  claim 16 , wherein the calculating of the pulse parameter comprises calculating a pulse duty ratio of the direct current signal based on the rising and falling edge signals sequentially detected. 
     
     
         19 . The method of  claim 16 , wherein the calculating of the pulse parameter comprises, when the direct current signal of the pulsed high-frequency power includes a plurality of direct current signals, calculating a pulse phase by comparing edge signals of the current signals with one another. 
     
     
         20 . A computer-readable recording medium recording a program to implement method of  claim 15 .