Systems and methods of treating a substrate

Abstract

Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner.

What is claimed is: 
     
         1 . A substrate treating system, comprising:
 a chamber with a processing space;   a supporting unit provided in the processing space to support a substrate;   a gas supplying unit provided in the processing space to supply gas into the processing space;   a plasma source unit generating plasma from the gas; and   a liner unit disposed to enclose the supporting unit,   wherein the supporting unit comprises a supporting plate supporting a substrate, and   the liner unit comprises:   an inner liner disposed to enclose the supporting plate; and   an actuator vertically moving the inner liner.   
     
     
         2 . The substrate treating system of  claim 1 , wherein the gas supplying unit comprises:
 a main nozzle coupled to a wall of the chamber to supply the gas into the processing space; and   an auxiliary nozzle provided on the inner liner to supply the gas into the processing space.   
     
     
         3 . The substrate treating system of  claim 2 , wherein the liner unit further comprises an outer liner provided in the chamber and shaped like a ring. 
     
     
         4 . The substrate treating system of  claim 2 , wherein the supporting unit further comprises a focus ring provided to enclose the supporting plate and have a circular shape, and
 the inner liner is provided to enclose the focus ring.   
     
     
         5 . The substrate treating system of  claim 4 , wherein the gas comprises a process gas, and the gas supplying unit further comprises an auxiliary process gas line supplying the process gas to the auxiliary nozzle. 
     
     
         6 . The substrate treating system of  claim 4 , wherein the gas comprises a cleaning gas, and the gas supplying unit further comprises an auxiliary cleaning gas line supplying the cleaning gas to the auxiliary nozzle. 
     
     
         7 . The substrate treating system of  claim 4 , wherein the gas comprises a process gas and a cleaning gas, and
 the gas supplying unit comprises:   an auxiliary process gas line supplying the process gas to the auxiliary nozzle; and   an auxiliary cleaning gas line supplying the cleaning gas to the auxiliary nozzle.   
     
     
         8 . The substrate treating system of  claim 4 , wherein the inner liner is provided to have a circular-ring shape, and
 the inner liner comprises a plurality of penetration holes formed through the inner liner along a circumference thereof to connect an internal space of the inner liner to an outer space.   
     
     
         9 . The substrate treating system of  claim 8 , wherein the penetration holes are positioned below the auxiliary nozzle. 
     
     
         10 . The substrate treating system of  claim 7 , wherein the liner unit further comprises a controller controlling the actuator, and
 the controller controls the actuator in such a way that a vertical position of the inner liner is changed depending on a state of a substrate treating process.   
     
     
         11 . The substrate treating system of  claim 10 , wherein the controller controls the actuator in such a way that the inner liner is positioned at a first position in a processing step of supplying the process gas into the chamber to treat the substrate and is positioned at a second position lower than the first position in a waiting step before loading the substrate into the chamber. 
     
     
         12 . The substrate treating system of  claim 10 , wherein the controller controls the actuator in such a way that the inner liner is positioned at a third position lower than the first position and higher than the second position, in a cleaning step of supplying the cleaning gas into the chamber to remove by-products from a space between the supporting plate and the focus ring. 
     
     
         13 . The substrate treating system of  claim 11 , wherein the first position is higher than a top surface of the supporting unit. 
     
     
         14 . The substrate treating system of  claim 11 , wherein the second position is lower than a top surface of the supporting unit. 
     
     
         15 . The substrate treating system of  claim 12 , wherein the third position is higher than the top surface of the supporting unit. 
     
     
         16 . The substrate treating system of  claim 6 , wherein the auxiliary nozzle is provided through the inner liner to directly supply the cleaning gas into a space between the focus ring and the supporting plate. 
     
     
         17 . The substrate treating system of  claim 6 , wherein the auxiliary nozzle is provided through the inner liner in such a way to allow the cleaning gas to be supplied in a direction parallel to a top surface of the supporting plate. 
     
     
         18 . A method of treating a substrate, comprising:
 a processing step of supplying a process gas into a processing space of a chamber to treat a substrate loaded on a supporting plate; and   a waiting step of waiting for loading of the substrate in the processing space of the chamber,   wherein an inner liner provided to enclose the supporting plate is positioned at a first position in the processing step and at a second position lower than the first position in the waiting step.   
     
     
         19 . The method of  claim 18 , further comprising a cleaning step for removing by-products from a space between a focus ring enclosing the supporting plate and the supporting plate, between the processing step and the waiting step,
 wherein in the cleaning step, the inner liner is positioned at a third position lower than the first position and higher than the second position.   
     
     
         20 . The method of  claim 18 , wherein, in the processing step, the process gas is supplied to a main nozzle provided through a wall of the chamber and to an auxiliary nozzle provided through the inner liner. 
     
     
         21 . The method of  claim 20 , wherein, in the processing step, amounts of the process gas supplied to the main nozzle and the auxiliary nozzle are substantially the same. 
     
     
         22 . The method of  claim 19 , wherein, in the cleaning step, the cleaning gas is supplied to an auxiliary nozzle provided through the inner liner. 
     
     
         23 . The method of  claim 18 , wherein the first position is higher than a top surface of the substrate loaded on the supporting plate. 
     
     
         24 . The method of  claim 18 , wherein the second position is lower than a top surface of the substrate loaded on the supporting plate. 
     
     
         25 . The method of  claim 19 , wherein the third position is higher than the top surface of the substrate loaded on the supporting plate. 
     
     
         26 . The method of  claim 18 , wherein the inner liner is provided to have a circular-ring shape and comprises a plurality of penetration holes formed through the inner liner along a circumference thereof to connect an internal space of the inner liner to an outer space, and
 in the first position, the penetration holes are positioned at a level higher than a top surface of the substrate loaded on the supporting plate.