Controlling Gate Formation for High Density Cell Layout

Abstract

Methods of forming a semiconductor structure and the semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a substrate having a first active region, a second active region, and an insulating region separating the first and the second active regions. The structure further includes a vertical gate structure extending over the first and the second active regions and the insulating region, and a horizontal gate structure extending over the insulating region between the first and the second active regions.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a substrate having a first active region, a second active region, and an insulating region separating the first and the second active regions;   a vertical gate structure extending over the first and the second active regions and the insulating region;   a horizontal gate structure extending over the insulating region between the first and the second active regions, wherein the horizontal gate structure and the vertical gate structure have a gap of about 65 nm to about 95 nm therebetween directly over the insulating region.   
     
     
         2 . The structure of  claim 1 , wherein the first and the second active regions are parallel, and wherein the vertical gate structure is a straight strip having a longitudinal direction perpendicular to a longitudinal direction of the first and the second active regions. 
     
     
         3 . The structure of  claim 1 , wherein a distance between opposing edges of the first and second active regions is between about 300 nm and about 400 nm. 
     
     
         4 . The structure of  claim 1 , wherein the horizontal gate structure and the vertical gate structure form a T shape or an L shape. 
     
     
         5 . The structure of  claim 1 , wherein an endcap of the vertical gate structure extends about 50 nm from an edge of an active region of the substrate, and wherein a distance between an edge of the horizontal gate structure and an edge of an active region of the substrate is between about 105 nm and about 155 nm. 
     
     
         6 . The structure of  claim 1 , further comprising dummy patterns in an active region of the substrate, the dummy patterns having non-uniform spacing and being comprised of the same material as the gate structures. 
     
     
         7 . A semiconductor structure, comprising:
 a first active region and a second active region in a substrate, the first active region and the second active region separated by an insulating region;   a gate dielectric layer disposed over the substrate;   a gate electrode layer disposed over the gate dielectric layer;   a horizontal gate structure extending over the insulating region between the first active region and the second active region; and   a first vertical gate structure and a second vertical gate structure, the first vertical gate structure including an endcap, wherein the endcap extends between about 40 nm and about 60 nm from an edge of the first active region.   
     
     
         8 . The structure of  claim 7 , wherein the horizontal gate structure and the first vertical gate structure form a T shape or an L shape. 
     
     
         9 . The structure of  claim 7 , wherein a distance between an edge of the horizontal gate structure and an edge of the first active region is between about 105 nm and about 155 nm. 
     
     
         10 . The structure of  claim 7 , wherein a distance between an edge of the first action region and an edge of the second active region is between about 300 nm and 400 nm. 
     
     
         11 . The structure of  claim 7 , wherein the first active region and the second active region are parallel, wherein the first vertical gate structure has a longitudinal direction perpendicular to a longitudinal direction of the first active region, wherein the second vertical gate structure is has a longitudinal direction perpendicular to a longitudinal direction of the first active region. 
     
     
         12 . The structure of  claim 7 , wherein the second vertical gate structure includes a second endcap, wherein the second endcap extends between about 40 nm and about 60 nm from an edge of the second active region. 
     
     
         13 . The structure of  claim 7 , further including a first gap of about 65 nm to about 95 nm over the insulating region, between the endcap and the horizontal gate structure. 
     
     
         14 . The structure of  claim 7 , further including a second gap of about 65 nm to about 95 nm over the insulating region, between the second endcap and the horizontal gate structure. 
     
     
         15 . A semiconductor structure comprising:
 a substrate having a first active region, a second active region that is parallel to the first active region, and an insulating region separating the first active region and the second active region;   a first vertical gate structure extending over the first active region, the second active region and the insulating region;   a second vertical gate structure extending over the first active region, the second active region and the insulating region, wherein the second vertical gate structure is parallel to the first vertical gate structure;   a first horizontal gate structure extending over the insulating region between the first active region and the second active region, the first horizontal gate structure coupling the first vertical gate structure and the second vertical gate structure; and   a second horizontal gate structure,
 wherein the first active region is between the second horizontal gate structure and the first horizontal gate structure, 
 wherein there is a gap of about 65 nm to about 95 nm between the second horizontal gate structure and the first vertical gate structure. 
   
     
     
         16 . The structure of  claim 15 , further comprising:
 an endcap portion of the first vertical gate structure, wherein the endcap extends in the direction of the second horizontal gate structure, wherein the endcap extends between about 40 nm and about 60 nm from an edge of the first active region.   
     
     
         17 . The structure of  claim 15 , wherein the second horizontal portion is spaced from the first active region by no greater than 155 nm. 
     
     
         18 . The structure of  claim 15 , wherein the second horizontal portion is coupled with the second vertical portion by a curved portion. 
     
     
         19 . The structure of  claim 15 , wherein the second horizontal portion is spaced from the first active region by about 105 nm to about 155 nm. 
     
     
         20 . The structure of  claim 15 , wherein the first vertical gate structure has a longitudinal direction perpendicular to a longitudinal direction of the first active region, wherein the second vertical gate structure is has a longitudinal direction perpendicular to a longitudinal direction of the first active region.