Apparatus and method for sputtering hard coatings

Abstract

A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma.

What is claimed is:  
     
         1 - 13 . (canceled) 
     
     
         14 . A method of sputtering a thin films, the method comprising:
 a. supplying a feed gas proximate to an anode and a cathode assembly comprising a magnet assembly and a sputtering target; and   b. generating a pulsed voltage waveform between the anode and the cathode assembly, the pulsed voltage waveform comprising voltage oscillations having an amplitude, a frequency, and a duration that generates a magnetron discharge with oscillating discharge current, wherein the amplitude and the duration of the voltage oscillations are chosen to generate an arc free magnetron discharge during a pulsed voltage waveform, a frequency of the voltage oscillations being chosen to increase an ionization rate of sputtered target material atoms; and   c. applying a negative bias voltage to a substrate holder supporting a substrate, the negative bias voltage attracting positive target material ions to the substrate, wherein the negative voltage and the frequency of the voltage oscillations are chosen to achieve a desired hardness of the sputtering film.   
     
     
         15 . The method of  claim 14 , further comprising moving the magnetic field. 
     
     
         16 . The method of  claim 14 , wherein the desired hardness of the sputtered film is in a range of 20-60 GPa. 
     
     
         17 . The method of  claim 16 , wherein the substrate comprises a cutting edge of a razor blade. 
     
     
         18 . The method of  claim 14 , wherein amplitude of the oscillating discharge current is in a range of 100 A-5000 A. 
     
     
         19 . The method of  claim 14 , wherein the oscillating discharge current generates a current density on the target in the range of 0.1 A/cm 2 -10 A/cm 2    
     
     
         20 . The method of  claim 14 , wherein the feed gas comprises a noble gas. 
     
     
         21 . The method of  claim 14 , wherein the sputtering target comprises at least one of Al, Cu, Ti, C, Ta, Mo, Ni, V, Si, B, In, Sn, W, Cr, Fe, B, Zr, Au, Ag, Pt, Re, Co, or Zn. 
     
     
         22 . The method of  claim 14 , wherein the target material comprises carbon. 
     
     
         23 . The method of  claim 14 , wherein the voltage oscillations begin from positive value. 
     
     
         24 . The method of  claim 22 , wherein the desired hardness of the sputtered carbon coating is in a range of 20-60 GPa. 
     
     
         25 . The method of  claim 14 , wherein the sputtering target comprises at least one of Al, Cu, Ti, C, Ta, Mo, Ni, V, Si, B, In, Sn, W, Cr, Fe, B, Zr, Au, Ag, Pt, Re, Co, or Zn. 
     
     
         26 . The method of  claim 14 , wherein the frequency of the voltage oscillations is in a range of 1-1,000 kHz. 
     
     
         27 . The method of  claim 14 , wherein an absolute value of at least one peak voltage of the voltage oscillation in the voltage pulse is in a range of 500 V and 3000 V.