Semiconductor Device and Method

Abstract

In accordance with an embodiment a first semiconductor die and a second semiconductor die are bonded to a first substrate. A protective cap is formed over and between the first semiconductor die and the second semiconductor die. An encapsulant is placed over the protective layer and portions of the encapsulant are removed in order to expose the protective cap or, alternatively, to expose the first semiconductor device and the second semiconductor device. The first substrate may then be bonded to a second substrate.

1 . A semiconductor device comprising:
 a first semiconductor device bonded to a first side of a first substrate, the first semiconductor device comprising a first sidewall;   a second semiconductor device bonded to the first side of the first substrate, the second semiconductor device comprising a second sidewall;   a conductive protective cap in physical contact with the first sidewall, the second sidewall, and the first substrate; and   an encapsulant between the first semiconductor device and the second semiconductor device, the encapsulant over at least a portion of the conductive protective cap.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first semiconductor device has a first surface facing away from the first substrate, wherein the conductive protective cap has a top surface that is planar with the first surface. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first semiconductor device has a first surface facing away from the first substrate, wherein the conductive protective cap covers the first surface. 
     
     
         4 . The semiconductor device of  claim 1 , further comprising a second substrate bonded to the first substrate on an opposite side from the first semiconductor device. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the protective cap is titanium. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the protective cap is aluminum. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the protective cap extends from the first sidewall to the second sidewall. 
     
     
         8 . A semiconductor device comprising:
 a first semiconductor die laterally separated from a second semiconductor die;   a conductive layer extending from a sidewall of the first semiconductor die to a sidewall of the second semiconductor die, wherein the conductive layer covers the sidewall of the first semiconductor die and the sidewall of the second semiconductor die;   an encapsulant over the conductive layer and between the first semiconductor die and the second semiconductor die;   a first substrate bonded to the first semiconductor die and the second semiconductor die; and   a second substrate bonded to the first substrate opposite the first semiconductor die.   
     
     
         9 . The semiconductor device of  claim 8 , wherein the conductive layer comprises titanium. 
     
     
         10 . The semiconductor device of  claim 8 , wherein the conductive layer comprises aluminum. 
     
     
         11 . The semiconductor device of  claim 8 , wherein the conductive layer comprises a composite layer. 
     
     
         12 . The semiconductor device of  claim 8 , wherein the conductive layer does not extend over the first semiconductor die. 
     
     
         13 . The semiconductor device of  claim 8 , wherein the conductive layer has a first top surface, the encapsulant has a second top surface, and the first semiconductor die has a third top surface, wherein the first top surface, the second top surface, and the third top surface are planar with each other. 
     
     
         14 . The semiconductor device of  claim 8 , wherein the conductive layer has a first top surface, the encapsulant has a second top surface, and the first semiconductor die has a third top surface, wherein the first top surface and the second top surface are planar with other but are not planar with the third top surface. 
     
     
         15 .- 20 . (canceled) 
     
     
         21 . A semiconductor device comprising:
 a first semiconductor die on a first substrate, the first semiconductor die comprising a first sidewall;   a second semiconductor die on the first substrate, the second semiconductor die comprising a second sidewall facing the first sidewall;   a conformal metal cap in physical contact with the first sidewall, the second sidewall, and the first substrate; and   an encapsulant in contact with the conformal metal cap and between the first semiconductor die and the second semiconductor die.   
     
     
         22 . The semiconductor device of  claim 21 , further comprising a second substrate bonded to the first substrate on an opposite side from the first semiconductor die. 
     
     
         23 . The semiconductor device of  claim 21 , wherein the conformal metal cap comprises a first layer of a first metal and a second layer of a second metal, wherein the first metal is different from the second metal. 
     
     
         24 . The semiconductor device of  claim 23 , wherein the first metal is aluminum and the second metal is titanium. 
     
     
         25 . The semiconductor device of  claim 21 , wherein the encapsulant has a first surface that is planar with conformal metal cap. 
     
     
         26 . The semiconductor device of  claim 25 , wherein the conformal metal cap has a second surface that is planar with the first semiconductor die.