US2015225679A1PendingUtilityA1

Processes and solutions for substrate cleaning and electroless deposition

Assignee: LAM RES CORPPriority: Mar 28, 2008Filed: Apr 17, 2015Published: Aug 13, 2015
Est. expiryMar 28, 2028(~1.7 yrs left)· nominal 20-yr term from priority
H10P 70/277H10P 70/00H10W 20/062H10W 20/056C11D 3/2086C11D 3/042C23C 16/0227C11D 3/04H01L 21/02041C11D 3/0073C11D 11/0047C11D 2111/22
45
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Claims

Abstract

This invention pertains to fabrication of devices. One embodiment is a method of substrate cleaning and electroless deposition of a cap layer for an integrated circuit. The method is performed on a substrate having a surface comprising a metal and dielectric damascene metallization layer. The method comprises exposing the surface of the substrate to a cleaning solution sufficient to clean the surface of the substrate and exposing the surface of the substrate to an electroless deposition solution sufficient to deposit the cap layer. Other embodiments of the present invention include solutions to clean the substrate and solutions to accomplish electroless deposition.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A cleaning solution for cleaning a substrate for electroless deposition of a cap layer on the substrate, the cleaning solution comprising one or more hydroxycarboxylic acid(s) or one or more non-alkali metal salt(s) of one or more hydroxycarboxylic acid(s). 
     
     
         2 . The cleaning solution of  claim 1  having a pH >0.5 and <2.5 and further comprising:
 one or more surfactant(s); 
 one or more reducing agent(s); and 
 optionally, one or more pH adjustor(s). 
 
     
     
         3 . The cleaning solution of  claim 1  having a pH >2.5 and <5 and further comprising:
 one or more surfactant(s); 
 one or more reducing agent(s); 
 optionally, one or more pH adjustor(s); and 
 optionally, one or more complexing agent(s) for Cu(I) ions. 
 
     
     
         4 . The cleaning solution of  claim 1  having a pH >5 and <8 and further comprising:
 one or more surfactant(s); 
 one or more reducing agent(s); 
 optionally, one or more pH adjustor(s); 
 optionally, one or more complexing agent(s) for Cu(I) ions; 
 optionally, one or more corrosion inhibitor(s) substantially free of nitrogen and substantially free of sulfur; and 
 optionally, one or more oxygen scavenger(s). 
 
     
     
         5 . The cleaning solution of  claim 1  having a pH >8 and <13 and further comprising:
 one or more surfactant(s); 
 one or more reducing agent(s); 
 optionally, one or more pH adjustor(s); 
 optionally, one or more complexing agent(s) for Cu(I) ions; 
 optionally, one or more corrosion inhibitor(s) substantially free of nitrogen and substantially free of sulfur; and 
 optionally, one or more oxygen scavenger(s). 
 
     
     
         6 . The cleaning solution of  claim 1  having a pH <2.5 and further comprising:
 optionally, one or more surfactant(s); 
 optionally, one or more reducing agent(s); and 
 optionally, one or more pH adjustor(s). 
 
     
     
         7 . The cleaning solution of  claim 1  having a pH >0.5 and <2.5 and further comprising:
 one or more surfactant(s); 
 one or more reducing agent(s); 
 optionally, one or more pH adjustor(s); and 
 one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid. 
 
     
     
         8 . The cleaning solution of  claim 1  having a pH >2.5 and <5 and further comprising:
 one or more surfactant(s); 
 one or more reducing agent(s); 
 optionally, one or more pH adjustor(s); 
 optionally, one or more complexing agent(s) for Cu(I) ions; and 
 one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid. 
 
     
     
         9 . The cleaning solution of  claim 1  having a pH >5 and <8 and further comprising:
 one or more surfactant(s); 
 one or more reducing agent(s); 
 optionally, one or more pH adjustor(s); 
 optionally, one or more complexing agent(s) for Cu(I) ions; 
 optionally, one or more corrosion inhibitor(s) substantially free of nitrogen and substantially free of sulfur; 
 optionally, one or more oxygen scavenger(s); and 
 one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid. 
 
     
     
         10 . The cleaning solution of  claim 1  having a pH >8 and <13 and further comprising:
 one or more surfactant(s); 
 one or more reducing agent(s); 
 optionally, one or more pH adjustor(s); 
 optionally, one or more complexing agent(s) for Cu(I) ions; 
 optionally, one or more corrosion inhibitor(s) substantially free of nitrogen and substantially free of sulfur; 
 optionally, one or more oxygen scavenger(s); and 
 one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid. 
 
     
     
         11 . The cleaning solution of  claim 1  having a pH <2.5 and further comprising:
 optionally, one or more surfactant(s); 
 optionally, one or more reducing agent(s); 
 optionally, one or more pH adjustor(s); and 
 one or more fluoride compound(s) selected from the group consisting of hydrogen fluoride, tetrafluoroborate, and non-metal salts of hydrofluoric acid; 
 the pH of the cleaning solution is. 
 
     
     
         12 . The cleaning solution of  claim 1  having a pH <2.5 and further comprising:
 one or more oxidizer(s); 
 optionally, one or more surfactant(s); and 
 optionally, one or more pH adjustor(s). 
 
     
     
         13 . The cleaning solution of  claim 1  having a pH >1 and <6 and further comprising:
 one or more surfactant(s); 
 optionally, one or more reducing agent(s); and 
 optionally, one or more pH adjustor(s); 
 
       wherein the electroless deposition of the cap layer is accomplished using an electroless deposition solution comprising:
 the one or more hydroxycarboxylic acid(s) or the one or more non-alkali metal salt(s) of the one or more hydroxycarboxylic acid(s); 
 the one or more surfactant(s); 
 optionally, the one or more reducing agent(s); and 
 optionally, the one or more pH adjustor(s). 
 
     
     
         14 . The cleaning solution of  claim 1  having a pH >1 and <6 and further comprising:
 optionally, one or more surfactant(s); 
 optionally, one or more reducing agent(s); and 
 optionally, one or more pH adjustor(s); 
 
       wherein the electroless deposition of the cap layer is accomplished using an electroless deposition solution comprising:
 the one or more hydroxycarboxylic acid(s) or the one or more non-alkali metal salt(s) of the one or more hydroxycarboxylic acid(s); 
 
       one or more surfactant(s);
 optionally, the one or more reducing agent(s); and 
 optionally, the one or more pH adjustor(s).

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