Electroplating Chemical Leveler

Abstract

Presented herein is a method of processing a device, comprising providing an electroplating bath having a leveler, the leveler having a total nitrogen-to-total carbon (TN/TOC) ratio of about 15% or less, bringing a substrate into contact with the electroplating bath, the substrate having a recess formed therein and electroplating the substrate to create a feature substantially free of voids in the substrate recess. Electroplating the substrate is performed for a time period about as long as an electrical response peak of the leveler, and optionally for at least 30 seconds. The leveler may optionally have at least one ingredient free of nitrogen and having a leveling functionality. One ingredient may be a benzene ring free of nitrogen. The leveler TN/TOC ratio is between about 3% and about 15%.

What is claimed is: 
     
         1 . A method of forming a device, comprising:
 bringing a substrate into contact with an electroplating solution, the electroplating solution having a leveler with a total nitrogen-to-total carbon (TN/TOC) ratio of less than about 15%; and   electroplating the substrate in the electroplating solution for a time period having a duration about as long as an electrical response peak time of the leveler.   
     
     
         2 . The method of  claim 1 , wherein the electroplating the substrate comprises electroplating the substrate for at least about 30 seconds. 
     
     
         3 . The method of  claim 1 , wherein the leveler TN/TOC ratio is between about 3% and about 15%. 
     
     
         4 . The method of  claim 1 , wherein the leveler TN/TOC ratio is about 5%. 
     
     
         5 . The method of  claim 1 , wherein the substrate has a recess and wherein the electroplating the substrate comprises electroplating the recess of the substrate and forming a via in the recess, the via substantially free of voids. 
     
     
         6 . The method of  claim 1 , wherein the electroplating the substrate comprises electroplating the substrate with copper. 
     
     
         7 . The method of  claim 1 , wherein the bringing a substrate into contact with an electroplating solution comprises providing a leveler having at least one constituent ingredient free of nitrogen, the at least one constituent ingredient further having a leveling functionality. 
     
     
         8 . A method of processing a device, comprising:
 providing an electroplating bath having a leveler, the leveler having a total nitrogen-to-total carbon (TN/TOC) ratio of about 15% or less;   bringing a substrate into contact with the electroplating bath, the substrate having a recess formed therein; and   electroplating the substrate in the electroplating solution, the electroplating the substrate comprising forming an electroplated feature in the recess, the feature substantially free of voids.   
     
     
         9 . The method of  claim 8 , wherein the electroplating the substrate is performed for a time period having a duration about as long as an electrical response peak time of the leveler. 
     
     
         10 . The method of  claim 8 , wherein the electroplating the substrate is performed for at least about 30 seconds. 
     
     
         11 . The method of  claim 8 , wherein the leveler has at least one ingredient free of nitrogen, the at least one ingredient further having a leveling functionality. 
     
     
         12 . The method of  claim 8 , wherein the leveler has at least one ingredient that is a benzene ring free of nitrogen. 
     
     
         13 . The method of  claim 8 , wherein the leveler comprises at least benzene. 
     
     
         14 . The method of  claim 8 , wherein the leveler TN/TOC ratio is between about 3% and about 15%. 
     
     
         15 . The method of  claim 8 , wherein the leveler TN/TOC ratio is about 5%. 
     
     
         16 . An electroplating leveler, comprising:
 a hydrocarbon free of nitrogen and having a leveling functionality;   wherein the electroplating leveler has an electrical response peak of at least about 30 second, and wherein the electroplating leveler has a total nitrogen-to-total carbon (TN/TOC) ratio of about 15% or less.   
     
     
         17 . The electroplating leveler of  claim 16 , wherein the hydrocarbon is a benzene ring free of nitrogen. 
     
     
         18 . The electroplating leveler of  claim 16 , wherein the hydrocarbon is benzene. 
     
     
         19 . The electroplating leveler of  claim 16 , wherein the leveler TN/TOC ratio is between about 3% and about 15%. 
     
     
         20 . The electroplating leveler of  claim 16 , wherein the leveler TN/TOC ratio is about 5%.