Method for washing semiconductor manufacturing apparatus component, apparatus for washing semiconductor manufacturing apparatus component, and vapor phase growth apparatus

Abstract

A semiconductor manufacturing apparatus component ( 101 ), to which a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0≦x<1, 0≦y<1, and 0≦x+y<1) adheres, is disposed inside a washing apparatus ( 100 ) provided with a gas introducing pipe ( 104 ) and a gas discharging pipe ( 105 ). After the inside of the apparatus is set to a decompressed state, a halogen-containing gas is introduced from the gas introducing pipe ( 104 ) to set a pressure inside the apparatus to be equal to or more than 10 kPa and equal to or less than 90 kPa. Then, the halogen-containing gas is retained inside the apparatus to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component ( 101 ).

1 . A method for washing a semiconductor manufacturing apparatus component, the method comprising:
 a first process of disposing a semiconductor manufacturing apparatus component, to which a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0≦x<1, 0≦y<1, and 0≦x+y<1) adheres, inside an apparatus provided with a gas introducing pipe and a gas discharging pipe;   a second process of setting the inside of the apparatus to a decompressed state, and then introducing a halogen-containing gas from the gas introducing pipe; and   a third process of retaining the halogen-containing gas inside the apparatus to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component,   wherein a pressure inside the apparatus in the third process is equal to or more than 10 kPa and equal to or less than 90 kPa.   
     
     
         2 . The method for washing a semiconductor manufacturing apparatus component according to  claim 1 , further comprising:
 a fourth process of removing a reaction product that is generated inside the apparatus.   
     
     
         3 . The method for washing a semiconductor manufacturing apparatus component according to  claim 2 ,
 wherein in the fourth process, an inert gas is introduced to the inside of the apparatus, and a vapor of the reaction product is discharged to the outside of the apparatus.   
     
     
         4 . The method for washing a semiconductor manufacturing apparatus component according to  claim 2 , further comprising:
 a fifth process of recovering a gallium compound.   
     
     
         5 . The method for washing a semiconductor manufacturing apparatus component according to  claim 4 ,
 wherein in the fifth process, NH 3  and the reaction product are allowed to react with each other to recover the gallium compound.   
     
     
         6 . The method for washing a semiconductor manufacturing apparatus component according to  claim 2 ,
 wherein the second process to the fourth process are carried out two or more times.   
     
     
         7 . The method for washing a semiconductor manufacturing apparatus component according to  claim 1 ,
 wherein in the second process, an inert gas is further introduced to the inside of the apparatus.   
     
     
         8 . The method for washing a semiconductor manufacturing apparatus component according to  claim 1 ,
 wherein a temperature inside the apparatus in the third process is equal to or higher than 500° C. and equal to or lower than 1000° C.   
     
     
         9 . An apparatus for washing a semiconductor manufacturing apparatus component to which a nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0≦x<1, 0≦y<1, and 0≦x+y<1) adheres, the apparatus comprising:
 a component holding portion that holds the semiconductor manufacturing apparatus component; 
 a gas introducing pipe that introduces a halogen-containing gas to react with the nitride semiconductor; 
 a trapping unit that traps a reaction product of the nitride semiconductor and the halogen-containing gas; and 
 a gas discharging pipe that discharges the reaction product. 
 
     
     
         10 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 9 , further comprising:
 a washing processing portion; and   a cooling portion that cools the trapping unit,   wherein the component holding portion is disposed inside the washing processing portion, and the trapping unit is disposed inside the cooling portion.   
     
     
         11 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 10 ,
 wherein the cooling portion has a function of regulating a temperature inside the trapping unit.   
     
     
         12 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 9 ,
 wherein the trapping unit is a cooling panel.   
     
     
         13 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 9 ,
 wherein the trapping unit is formed from a material that does not react with the reaction product.   
     
     
         14 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 13 ,
 wherein the trapping unit is formed from quartz.   
     
     
         15 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 9 , further comprising:
 a recovery unit that recovers a gallium compound from the reaction product.   
     
     
         16 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 15 ,
 wherein in the recovery unit, NH 3  and the reaction product are allowed to react with each other to recover the gallium compound.   
     
     
         17 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 9 ,
 wherein the gas introducing pipe and the gas discharging pipe are closed to retain and use the halogen-containing gas inside the apparatus.   
     
     
         18 . The apparatus for washing a semiconductor manufacturing apparatus component according to  claim 9 ,
 wherein a hooking portion that hooks and holds the semiconductor manufacturing apparatus component is formed in the component holding portion in order for the entire surface of the semiconductor manufacturing apparatus component to be processed.   
     
     
         19 . A vapor phase growth apparatus that supplies a first raw material gas containing gallium and a second raw material gas containing ammonia to a substrate inside a reaction tank to form nitride semiconductor expressed by a general formula of Al x In y Ga 1-x-y N (provided that, x and y satisfy relationships of 0≦x<1, 0≦y<1, and 0≦x+y<1) on the substrate, the apparatus comprising:
 a substrate holding portion that holds the substrate; 
 a gas introducing pipe that introduces a halogen-containing gas; 
 a trapping unit that traps a reaction product of the nitride semiconductor and the halogen-containing gas; and 
 a gas discharging pipe that discharges the reaction product.