MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates

Abstract

A device includes providing a silicon substrate; annealing the silicon substrate at a first temperature higher than about 900° C.; and lowering a temperature of the silicon substrate from the first temperature to a second temperature. A temperature lowering rate during the step of lowering the temperature is greater than about 1° C./second. A III-V compound semiconductor region is epitaxially grown on a surface of the silicon substrate using metal organic chemical vapor deposition (MOCVD).

What is claimed is: 
     
         1 . An apparatus for performing an epitaxial growth on a wafer, the apparatus comprising:
 a production tool configured to perform a metal organic chemical vapor deposition (MOCVD) on the wafer, the production tool comprising:
 a radiation source configured to heat the wafer to a temperature higher than about 900° C. 
   
     
     
         2 . The apparatus of  claim 1 , wherein the production tool further comprises a chamber configured to maintain a vacuum environment, wherein the radiation source is located in the chamber. 
     
     
         3 . The apparatus of  claim 1 , wherein the radiation source comprises a flash lamp. 
     
     
         4 . The apparatus of  claim 1  further comprising a coil configured to heat the wafer. 
     
     
         5 . The apparatus of  claim 4 , wherein the radiation source is located over the wafer, and the coil is located under the wafer. 
     
     
         6 . The apparatus of  claim 1 , wherein the radiation source is configured to perform rapid thermal annealing on the wafer. 
     
     
         7 . The apparatus of  claim 1 , wherein the radiation source is configured to perform a Rapid Thermal Annealing (RTA) on the wafer. 
     
     
         8 . The apparatus of  claim 1  being configured to allow the wafer to cool at a temperature lowering rate higher than about 1° C. 
     
     
         9 . The apparatus of  claim 8  being configured to allow the wafer to cool at the temperature lowering rate higher than about 5° C. 
     
     
         10 . The apparatus of  claim 1  being configured to provide a first power to the radiation source, and a second power lower than the first power to the radiation source. 
     
     
         11 . An apparatus for performing an epitaxial growth on a wafer, the apparatus comprising:
 a chamber configured to maintain a vacuum environment; and   a flash lamp in the chamber and over the wafer, wherein the chamber and the flash lamp are comprised in a production tool configured to perform a metal organic chemical vapor deposition (MOCVD) on the wafer.   
     
     
         12 . The apparatus of  claim 11  further comprising a coil configured to heat the wafer in the chamber. 
     
     
         13 . The apparatus of  claim 12 , wherein the coil is located under the wafer. 
     
     
         14 . The apparatus of  claim 11 , wherein the flash lamp is configured to perform a Rapid Thermal Annealing (RTA) on the wafer. 
     
     
         15 . The apparatus of  claim 11  being configured to allow the wafer to cool at a temperature lowering rate higher than about 1° C. 
     
     
         16 . The apparatus of  claim 11  being configured to allow the wafer to cool at the temperature lowering rate higher than about 5° C. 
     
     
         17 . The apparatus of  claim 11  being configured to provide a first power to the flash lamp, and a second power lower than the first power to the flash lamp. 
     
     
         18 . An apparatus for performing an epitaxial growth on a wafer, the apparatus comprising:
 a chamber;   a flash lamp in the chamber and over the wafer, wherein the chamber and the flash lamp are comprised in a production tool configured to perform a metal organic chemical vapor deposition (MOCVD) on the wafer; and   a coil configured to heat the wafer in the chamber.   
     
     
         19 . The apparatus of  claim 18 , wherein the apparatus is configured to heat the wafer using the flash lamp during the MOCVD. 
     
     
         20 . The apparatus of  claim 18 , wherein the apparatus is configured to heat the wafer using the coil during the MOCVD.