Low contamination components for semiconductor processsing apparatus and methods for making components

Abstract

Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.

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         10 . A process of manufacturing a component of a semiconductor processing apparatus comprising at least a portion comprising a ceramic material, the portion comprising an outermost surface of the component, and the ceramic material comprising a material selected from the group consisting of hafnium nitride, hafnium boride,
 hafnium carbide, hafnium fluoride, strontium oxide, strontium nitride, strontium boride, strontium carbide, strontium fluoride, lanthanum oxide, lanthanum nitride, lanthanum boride, lanthanum carbide, lanthanum fluoride, dysprosium oxide, dysprosium nitride, dysprosium boride, dysprosium carbide and dysprosium fluoride as a single largest constituent of the ceramic material coating, comprising applying the ceramic material as a coating over a substrate, the coating comprising an outermost surface of the component.   
     
     
         11 . The process of  claim 10 , wherein the ceramic material comprises one of strontium oxide, dysprosium oxide and lanthanum oxide as the single largest constituent. 
     
     
         12 . The process of  claim 10 , further comprising roughening a surface of the substrate, and applying the ceramic material on the roughened surface to enhance adhesion of the ceramic material on the substrate. 
     
     
         13 . The process of  claim 10 , wherein the coating consists essentially of the ceramic material. 
     
     
         14 . The process of  claim 10 , further comprising:
 applying at least one intermediate layer on the substrate; and   applying the coating on the at least one intermediate layer.   
     
     
         15 . The process of  claim 14 , further comprising at least one of:
 treating the substrate before applying the at least one intermediate layer to enhance adhesion of the at least one intermediate layer on the substrate; and   treating the at least one intermediate layer before applying the ceramic material to enhance adhesion of the ceramic material on the at least one intermediate layer.   
     
     
         16 . The process of  claim 10 , wherein the ceramic material is applied on the substrate by thermal spraying. 
     
     
         17 . The process of  claim 10 , wherein the ceramic material further comprises at least one material selected from the group consisting of (i) oxides, nitrides, borides, fluorides and carbides of the elements of Groups IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, and VB of the periodic table, and (ii) oxides, nitrides, borides, fluorides and carbides of the elements of the actinide series of the periodic table. 
     
     
         18 . A process of manufacturing a component of a semiconductor processing apparatus comprising at least a portion comprising a ceramic material, the portion comprising an outermost surface of the component, and the ceramic material comprising a material selected from the group consisting of hafnium nitride, hafnium boride,
 hafnium carbide, hafnium fluoride, strontium oxide, strontium nitride, strontium boride, strontium carbide, strontium fluoride, lanthanum oxide, lanthanum nitride, lanthanum boride, lanthanum carbide, lanthanum fluoride, dysprosium oxide, dysprosium nitride, dysprosium boride, dysprosium carbide and dysprosium fluoride as a single largest constituent of the ceramic material coating, comprising forming the component as a monolithic part which consists essentially of the ceramic material.   
     
     
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         34 . A process of manufacturing a component of a semiconductor processing apparatus, comprising:
 preparing a slurry comprising at least one ceramic material selected from the group consisting of hafnium oxide, hafnium nitride, hafnium boride, hafnium carbide, hafnium fluoride, strontium oxide, strontium nitride, strontium boride, strontium carbide, strontium fluoride, lanthanum oxide, lanthanum nitride, lanthanum boride, lanthanum carbide, lanthanum fluoride, -dysprosium oxide, dysprosium nitride, dysprosium boride, dysprosium carbide and dysprosium fluoride as a single largest constituent of the slurry;   forming a green compact from the slurry; and   sintering the green compact to form the component.   
     
     
         35 . The process of  claim 34 , wherein the slurry comprises one of hafnium oxide, strontium oxide, lanthanum oxide and dysprosium oxide as the single largest constituent of the slurry. 
     
     
         36 . The process of  claim 34 , wherein the component consists essentially of the at least one ceramic material. 
     
     
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         38 . The process of  claim 34 , wherein the ceramic material further comprises at least one material selected from the group consisting of (i) oxides, nitrides, borides, fluorides and carbides of the elements of Groups IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, and VB of the periodic table, and (ii) oxides, nitrides, borides, fluorides and carbides of the elements of the actinide series of the periodic table. 
     
     
         39 . The process of  claim 34 , wherein the component is selected from the group consisting of a chamber wall, a chamber liner, a gas distribution plate, a gas ring, a pedestal, a dielectric window, an electrostatic chuck and a plasma focus ring. 
     
     
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