Process for producing semiconductor device and apparatus therefor

Abstract

A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.

1 - 6 . (canceled) 
     
     
         7 . An apparatus for producing a semiconductor device, comprising:
 a first heating unit provided at an upper portion in the interior of a chamber; and   a second heating unit provided at a lower portion in the interior of the chamber.   
     
     
         8 . The apparatus for producing the semiconductor device according to  claim 7 ,
 wherein each of the first heating unit and the second heating unit independently or simultaneously performs heat control.   
     
     
         9 . The apparatus for producing the semiconductor device according to  claim 7 ,
 wherein the second heating unit is provided to face the first heating unit in the interior of the chamber.   
     
     
         10 . The apparatus for producing the semiconductor device according to  claim 7 , further comprising:
 a first moving unit moving the first heating unit in a longitudinal direction; and   a second moving unit moving the second heating unit in a longitudinal direction.   
     
     
         11 . The apparatus for producing the semiconductor device according to  claim 10 ,
 wherein both of the first moving unit and the second moving unit cooperate to drive the first heating unit and the second heating unit so that a separation distance between the first heating unit and the second heating unit is kept constant.   
     
     
         12 . The apparatus for producing the semiconductor device according to  claim 7 , further comprising
 a supporting unit supporting an object to be processed and moving the object to be processed in a longitudinal direction in the interior of the chamber.   
     
     
         13 . The apparatus for producing the semiconductor device according to  claim 7 , further comprising
 a gas introducing unit introducing a reducing gas into the interior of the chamber.   
     
     
         14 . The apparatus for producing the semiconductor device according to  claim 13 ,
 wherein the first heating unit controls an atmospheric temperature in the interior of the treatment chamber at the time of introducing the reducing gas into the interior of the treatment chamber to fall within a range of lower than the melting temperature of the bump and ±5° C. of the reduction starting temperature of the oxide film.