Method for tunably repairing low-k dielectric damage

Abstract

A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R) x (OR′) y , where y≧1 and x+y=4, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group and a second repair agent represented as Si—(R) x (OR′) y R″, where y≧1 and x+y=3, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group, and R″ is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

1 - 7 . (canceled) 
     
     
         8 . A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon, comprising:
 forming a repair layer on a surface of the damaged silicon based low-k dielectric layer, which replaces silanol (Si—OH) bonds with Si—C or CH 3  bonds; and   exposing the repair layer to a plasma, which replaces some CH 3  moieties with OH moieties.   
     
     
         9 . The method, as recited in  claim 8 , wherein the plasma provides ion bombardment or UV or VUV radiation. 
     
     
         10 . The method, as recited in  claim 9 , wherein the exposing the repair layer, comprises:
 providing a tuning gas, which consists essentially of an inert gas and/or O 2 ; and   forming the tuning gas into a plasma.   
     
     
         11 . The method, as recited in  claim 10 , wherein the tuning gas consists essentially of an inert gas. 
     
     
         12 . The method, as recited in  claim 8 , wherein the forming the repair layer, comprises:
 providing a mixture gas, comprising:
 a catalyst gas comprising a Lewis base gas; and 
 a alkoxysilane containing gas; and 
   binding a monolayer of an alkoxysilane on the silicon based low-k dielectric layer.   
     
     
         13 . The method, as recited in  claim 12 , wherein the Lewis base gas is an amine gas. 
     
     
         14 . The method, as recited in  claim 13 , wherein during the providing the mixture gas a wafer temperature is kept below 60° C. 
     
     
         15 . The method, as recited in  claim 8 , wherein the exposing the repair layer, comprises:
 providing a tuning gas, which consists essentially of an inert gas and/or O 2 ; and   forming the tuning gas into a plasma.   
     
     
         16 - 20 . (canceled) 
     
     
         21 . The method, as recited in  claim 8 , further comprising:
 etching features into the silicon based low-k dielectric layer through an organic mask before forming the repair layer; and   stripping the photoresist mask.   
     
     
         22 . The method, as recited in  21 , wherein a vacuum is maintained around the wafer from before etching until after exposing the repair layer to the plasma. 
     
     
         23 . The method, as recited in  claim 12 , wherein the alkoxysilane containing gas comprises dimethyloxysilane.