Demagnification measurement method for charged particle beam exposure apparatus, stage phase measurement method for charged particle beam exposure apparatus, control method for charged particle beam exposure apparatus, and charged particle beam exposure apparatus

Abstract

A method for measuring a demagnification of a charged particle beam exposure apparatus includes measuring a first stage position of a mask stage in accordance with a mask stage coordinate system, irradiating a first charged particle beam to a first irradiation position on a specimen through the opening portion of the mask, measuring the first irradiation position in accordance with a specimen stage coordinate system, moving the mask stage to a second stage position, measuring the second stage position of the mask stage, irradiating a second charged particle beam to a second irradiation position on the specimen through the opening portion of the mask measuring the second irradiation position in accordance with the specimen stage coordinate system, and calculating a demagnification of the charged particle beam exposure apparatus from the first and second stage positions and the first and second irradiation positions.

1 . A method for controlling a charged particle beam exposure apparatus, comprising:
 measuring a first stage position of a mask stage of the charged particle beam exposure apparatus in accordance with a mask stage coordinate system with an opening portion of a mask placed on the mask stage being situated in a first opening position;   irradiating a first charged particle beam to a first irradiation position on a surface of a specimen through the opening portion of the mask, the first charged particle beam being shaped through the opening portion situated in the first opening position and then passing through an objective lens system of the exposure apparatus;   measuring a first irradiation position in accordance with a specimen stage coordinate system;   moving the mask stage to a second stage position to situate the opening portion in a second opening position different from the first opening position;   measuring the second stage position of the mask stage in accordance with the mask stage coordinate system;   irradiating a second charged particle beam to a second irradiation position on the surface of the specimen through the opening portion of the mask moved together with the mask stage, the second charged particle beam being shaped through the opening portion situated in the second opening position and then passing through the objective lens system;   measuring the second irradiation position in accordance with a specimen stage coordinate system;   obtaining a demagnification of the objective lens system from the first and second stage positions and the first and second irradiation positions;   adjusting the demagnification of the objective lens system corresponding to the obtained demagnification;   measuring a rotation angle of a pattern of the charged particle beam shaped through the mask and then irradiated on the surface of the specimen via the objective optical system, after the adjusting;   correcting the rotation of the pattern by rotating the mask corresponding to the measured rotation angle;   measuring a third stage position of the mask stage in accordance with a mask stage coordinate system after correcting the rotation with the opening portion of the mask being situated in a third opening position;   irradiating a third charged particle beam to a third irradiation position on the surface of the specimen through the opening portion situated in the third opening position, the third charged particle beam being shaped through the opening portion situated in the third opening position and then passing through an objective lens system;   measuring the third irradiation position in accordance with a specimen stage coordinate system;   moving the mask stage to a fourth stage position to situate the opening portion in a fourth opening position different from the third opening position;   measuring the fourth stage position of the mask stage in accordance with the mask stage coordinate system;   irradiating a fourth charged particle beam to a fourth irradiation position on the surface of the specimen through the opening portion situated in the fourth opening position, the fourth charged particle beam being shaped through the opening portion situated in the fourth opening position and then passing through the objective lens system;   measuring the fourth irradiation position in accordance with a specimen stage coordinate system;   obtaining a phase difference between the specimen stage coordinate system and the mask stage coordinate system from the third and fourth stage positions and the third and fourth irradiation positions; and   moving the mask stage by correction in accordance with the phase difference.