Demagnification measurement method for charged particle beam exposure apparatus, stage phase measurement method for charged particle beam exposure apparatus, control method for charged particle beam exposure apparatus, and charged particle beam exposure apparatus

Abstract

A method for measuring a demagnification of a charged particle beam exposure apparatus includes measuring a first stage position of a mask stage in accordance with a mask stage coordinate system, irradiating a first charged particle beam to a first irradiation position on a specimen through the opening portion of the mask, measuring the first irradiation position in accordance with a specimen stage coordinate system, moving the mask stage to a second stage position, measuring the second stage position of the mask stage, irradiating a second charged particle beam to a second irradiation position on the specimen through the opening portion of the mask measuring the second irradiation position in accordance with the specimen stage coordinate system, and calculating a demagnification of the charged particle beam exposure apparatus from the first and second stage positions and the first and second irradiation positions.

1 . A charged particle beam exposure apparatus comprising:
 a radiating unit configured to radiate a charged particle beam;   an XY mask stage on which a mask having an opening is placed and which moves the mask stage in X and Y directions of a mask stage coordinate system;   a mask stage measuring unit configured to measure a position of the XY mask stage in accordance with the mask stage coordinate system;   a deflector which deflects the charged particle beam and changes the position of the charged particle beam on a surface of the mask;   an objective lens system which demagnifies a pattern of the charged particle beam shaped through the mask and irradiates the specimen with the charged particle beam;   a specimen stage on which the specimen is placed and which moves the specimen in X and Y directions of a specimen stage coordinate system;   an objective deflector which deflects the charged particle beam and changes the position of the charged particle beam on a surface of the specimen;   an irradiation position measuring unit configured to measure an irradiation position of the charged particle beam on the surface of the specimen in accordance with the specimen stage coordinate system; and   a demagnification measuring unit configured to measure a demagnification of the objective lens system on the basis of two positions of the XY mask stage measured at different opening positions respectively and a position of the charged particle beam on the surface of the specimen that was shaped through the opening of each of the opening positions.   
     
     
         2 . The charged particle beam exposure apparatus according to  claim 1 , further comprising:
 a θ mask stage which rotates the mask in an XY plane of the mask stage coordinate system;   a rotation angle measuring unit configured to measure a rotation angle of the pattern of the charged particle beam in the objective lens system;   a θ mask stage driving unit configured to drive the θ mask stage corresponding to the measured rotation angle;   a phase difference measure unit configured to measure a phase difference between the specimen stage coordinate system and the mask stage coordinate system from a position of the XY mask stage measured at two opening positions respectively and a position of the charged particle beam on the surface of the specimen that was shaped through the opening of each of the opening positions; and   a driving unit configured to drive the XY mask stage and the θ mask stage corresponding to the measured phase difference.   
     
     
         3 . A charged particle beam exposure apparatus comprising:
 a radiate unit configured to radiate a charged particle beam;   an XY mask stage on which a mask having an opening is placed and which moves the mask in X and Y directions of a mask stage coordinate system;   a θ mask stage which rotates the mask in an XY plane of the mask stage coordinate system;   an opening position measuring unit configured to measure a position of the opening in accordance with the mask stage coordinate system;   a deflector which deflects the charged particle beam and changes the position of the charged particle beam on a surface of the mask;   an objective lens system which demagnifies a pattern of the charged particle beam shaped through the mask and irradiates a specimen with the charged particle beam;   a specimen stage on which the specimen is placed and which moves the specimen in X and Y directions of a specimen stage coordinate system;   an objective deflector which deflects the charged particle beam and changes the position of the charged particle beam on a surface of the specimen;   an irradiation position measuring unit configured to measure an irradiation position of the charged particle beam on the surface of the specimen in accordance with the specimen stage coordinate system;   a rotation angle measuring unit configured to measure a rotation angle of the pattern of the charged particle beam in the objective lens system;   a phase measuring portion configured to measure a phase of the mask stage coordinate system with respect to the specimen stage coordinate system based on a position of the XY mask stage measured at two opening positions respectively and a position of the charged particle beam on the surface of the specimen that was shaped through the opening of each of the opening positions; and   a driving unit configured to drive the XY mask stage and the θ mask stage corresponding to the measured phase.