Apparatus and method for depositing and planarizing thin films of semiconductor wafers

Abstract

An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.

1 . An electroplating apparatus for electroplating a surface of a wafer, the surface of the wafer capable of being electrically charged as a cathode, comprising:
 a proximity head capable of being electrically charged as an anode, the proximity head having a plurality of inputs and a plurality of outputs, and when the proximity head is placed close to, but at a separation from the surface of the wafer, each of the plurality of inputs is capable of delivering a fluid to the surface of the wafer and each of the plurality of outputs is capable of removing the fluids from the surface of the wafer to define a controlled meniscus between the proximity head and the surface of the wafer, the delivery and removal of fluids to and from the surface of the wafer enabling a localized metallic plating when the wafer and proximity head are charged and contact is made to an edge exclusion region of the wafer, and the localized metallic plating facilitated at a location of the controlled meniscus, and the controlled meniscus being capable of movement when either the proximity head or the wafer are moved; and   an eddy current sensor integrated into the proximity head for end pointing the localized metallic plating over a region of the wafer, the eddy current sensor defined in the proximity head and proximate to a surface of the proximity head that is defined to face the surface of the wafer when present;   wherein the wafer is electrically charged as the cathode by way of a mechanical contact to an edge exclusion region of the wafer through a negative bias power supply.   
     
     
         2 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 1 , wherein the proximity head is electrically charged as the anode through electrical contact with a positive bias voltage supply. 
     
     
         3 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 1 , wherein each of the plurality of inputs on the proximity head are defined as one of circular conduits, annular rings, and discrete conduits. 
     
     
         4 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 1 , wherein the fluid is defined by one or more fluids and the fluids are selected from the group comprised of isopropyl alcohol (IPA), electrolytic solution, a plating chemistry that enables metallic plating, and an abrasive-free reactive chemical. 
     
     
         5 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 5 , wherein the plating chemistry is defined by an aqueous solution for depositing metals including one of a copper material, a nickel material, a thallium material, a tantalum material, a titanium material, a tungsten material, a cobalt material, an alloy material, and a composite metallic material. 
     
     
         6 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 1 , wherein each of the plurality of outputs on the proximity head are defined as one of circular conduits, annular rings, and discrete conduits. 
     
     
         7 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 1 , wherein the localized metallic plating, confines a volume of the fluid within an area beneath the proximity head, the area being less than an entirety of the wafer surface. 
     
     
         8 . An electroplating apparatus for electroplating a surface of a wafer, the surface of the wafer capable of being electrically charged as a cathode, comprising:
 a proximity head capable of being electrically charged as an anode, the proximity head having a plurality of inputs and a plurality of outputs, and when the proximity head is placed close to, but at a separation from the surface of the wafer, each of the plurality of inputs is capable of delivering a fluid to the surface of the wafer, and each of the plurality of outputs is capable of removing the fluids from the surface of the wafer to define a controlled meniscus between the proximity head and the surface of the wafer, the delivery and removal of fluids to and from the surface of the wafer enabling a localized metallic plating when the wafer and proximity head are charged and contact is made to an edge exclusion region of the wafer, and the localized metallic plating facilitated at a location of the controlled meniscus, and the controlled meniscus being capable of movement when either the proximity head or the wafer are moved; and   an eddy current sensor integrated into the proximity head for end pointing the localized metallic plating over a region of the wafer, the eddy current sensor defined in the proximity head and proximate to a surface of the proximity head that is defined to face the surface of the wafer when present, the eddy current sensor positioned at about a center location of the proximity head;   a mechanical contact electrically chargeable as a cathode is defined to contact an edge exclusion region of the wafer when present, the mechanical contact being coupled to a negative bias power supply, and the proximity head is electrically charged as the anode through electrical contact with a positive bias voltage supply.   
     
     
         9 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 8 , wherein each of the plurality of inputs on the proximity head are defined as one of circular conduits, annular rings, and discrete conduits. 
     
     
         10 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 8 , wherein the fluid is defined by one or more fluids and the fluids are selected from the group comprised of isopropyl alcohol (IPA), electrolytic solution, a plating chemistry that enables metallic plating, and an abrasive-free reactive chemical. 
     
     
         11 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 10 , wherein the plating chemistry is defined by an aqueous solution for depositing metals including one of a copper material, a nickel material, a thallium material, a tantalum material, a titanium material, a tungsten material, a cobalt material, an alloy material, and a composite metallic material. 
     
     
         12 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 8 , wherein each of the plurality of outputs on the proximity head are defined as one of circular conduits, annular rings, and discrete conduits. 
     
     
         13 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 8 , wherein the eddy current sensor is defined between two inputs. 
     
     
         14 . An electroplating apparatus for electroplating a surface of a wafer as recited in  claim 8 , wherein the localized metallic plating, confines a volume of the fluid within an area beneath the proximity head, the area being less than an entirety of the wafer surface.