High Power Pulse Ionized Physical Vapor Deposition

Abstract

Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

1 - 78 . (canceled) 
     
     
         79 . A sputtering source comprising:
 a) a cathode assembly comprising a sputtering target that is positioned adjacent to an anode;   b) a magnet positioned adjacent to sputtering target, the magnet generating a magnetic field adjacent to sputtering target;   c) a power supply that generates a voltage pulse between the anode and the cathode assembly that creates a weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma without an occurrence of arcing between the anode and the cathode assembly, an amplitude of the voltage pulse being chosen to increase a density of ions in the strongly-ionized plasma;   d) a substrate support that is positioned adjacent to the sputtering target; and   e) a bias voltage source having an output that is electrically coupled to the substrate support.   
     
     
         80 . The sputtering source of  claim 79  wherein the strongly ionized plasma at least partially converts neutral sputtered atoms into positive ions in order to enhance sputtering with ionized physical vapor deposition. 
     
     
         81 . The sputtering source of  claim 79  wherein the amplitude of the voltage pulse is in the range of about 1V to 25 kV. 
     
     
         82 . The sputtering source of  claim 79  wherein the strongly ionized plasma corresponded to a pulse power that is in the range of about 1 kW to 10 MW. 
     
     
         83 . The sputtering source of  claim 79  wherein the magnetic field is in a range of about 50 G to 2000 G. 
     
     
         84 . The sputtering source of  claim 79  wherein the magnet rotates. 
     
     
         85 . The sputtering source of  claim 79  wherein the magnet comprises an unbalanced magnet assembly. 
     
     
         86 . The sputtering source of  claim 79  wherein the output of the bias voltage source generates a continuous substrate bias voltage. 
     
     
         87 . The sputtering source of  claim 79  wherein the output of the bias voltage power supply returns to a zero voltage level between voltage pulses. 
     
     
         88 . A sputtering source comprising:
 a) a cathode assembly comprising a sputtering target that is positioned adjacent to an anode;   b) a magnet positioned adjacent to sputtering target, the magnet generating a magnetic field adjacent to sputtering target;   c) a power supply that generates a voltage pulse between the anode and the cathode assembly that creates a weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma without an occurrence of arcing between the anode and the cathode assembly, a rise time of the voltage pulse being chosen to increase a density of ions in the strongly-ionized plasma;   d) a substrate support that is positioned adjacent to the sputtering target; and   e) a bias voltage source having an output that is electrically coupled to the substrate support.   
     
     
         89 . The sputtering source of  claim 88  wherein the strongly ionized plasma at least partially converts neutral sputtered atoms into positive ions in order to enhance sputtering with ionized physical vapor deposition. 
     
     
         90 . The sputtering source of  claim 88  wherein the rise time of the voltage pulse is in the range of about 0.01V/μsec to 1000V/μsec. 
     
     
         91 . The sputtering source of  claim 88  wherein the strongly ionized plasma during the voltage pulse corresponded to a pulse power that is in a range of about 1 kW to 10 MW. 
     
     
         92 . The sputtering source of  claim 88  wherein the magnetic field is in a range of about 50 G to 2000 G. 
     
     
         93 . The sputtering source of  claim 88  wherein the magnetic rotates. 
     
     
         94 . The sputtering source of  claim 88  wherein magnetic comprises an unbalanced magnet assembly. 
     
     
         95 . The sputtering source of  claim 88  wherein the output of the bias voltage source returns to zero volts between the voltage pulses. 
     
     
         96 . The sputtering source of  claim 88  wherein the bias voltage source generates continuous substrate bias voltage. 
     
     
         97 . A sputtering source comprising:
 a) a cathode assembly comprising a sputtering target that is positioned adjacent to an anode;   b) a magnet positioned adjacent to sputtering target, the magnet generating a magnetic field adjacent to sputtering target;   c) a power supply that generates a voltage pulse between the anode and the cathode assembly that creates a weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma without an occurrence of arcing between the anode and the cathode assembly, a duration of the voltage pulse being chosen to increase a density of ions in the strongly-ionized plasma;   d) a substrate support that is positioned adjacent to the sputtering target; and   e) a bias voltage source having an output that is electrically coupled to the substrate support.   
     
     
         98 . The sputtering source of  claim 97  wherein the strongly ionized plasma at least partially converts neutral sputtered atoms into positive ions in order to enhance the sputtering process with ionized physical vapor deposition. 
     
     
         99 . The sputtering source of  claim 97  wherein a pulse duration of the voltage pulse is in the range of about 0.1 μsec to 100 sec. 
     
     
         100 . The sputtering source of  claim 97  wherein the strongly ionized plasma during the voltage pulse corresponded to a pulse power that is in a range of about 1 kW to 10 MW. 
     
     
         101 . The sputtering source of  claim 97  wherein the magnetic field is in a range of about 50 G to 2000 G. 
     
     
         102 . The sputtering source of  claim 97  wherein the magnet rotates. 
     
     
         103 . The sputtering source of  claim 97  wherein magnetic comprises an unbalanced magnetic assembly. 
     
     
         104 . The sputtering source of  claim 97  wherein a bias voltage source generates continuous substrate bias voltage. 
     
     
         105 . The sputtering source of  claim 97  wherein an output of the bias voltage power supply returns to zero volts between the voltage pulses. 
     
     
         106 . A method for high deposition rate sputtering, the method comprising:
 a) generating a voltage pulse between the anode and the cathode assembly comprising a sputtering target, the voltage pulse creating a weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma without an occurrence of arcing between the anode and the cathode assembly; and   b) adjusting an amplitude of the voltage pulse to increase a density of ions in the strongly-ionized plasma.   
     
     
         107 . A method for high deposition rate sputtering, the method comprising:
 a) generating a voltage pulse between the anode and the cathode assembly comprising a sputtering target, the voltage pulse creating a weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma without an occurrence of arcing between the anode and the cathode assembly; and   b) adjusting a rise time of the voltage pulse to increase a density of ions in the strongly-ionized plasma.   
     
     
         108 . A method for high deposition rate sputtering, the method comprising:
 a) generating a voltage pulse between the anode and the cathode assembly comprising a sputtering target, the voltage pulse creating a weakly-ionized plasma and then a strongly-ionized plasma from the weakly-ionized plasma without an occurrence of arcing between the anode and the cathode assembly; and   b) adjusting a duration of the voltage pulse to increase a density of ions in the strongly-ionized plasma.