US2010326476A1PendingUtilityA1

Method for processing a substrate and apparatus for performing the same

Assignee: SEMES CO LTDPriority: Jun 30, 2009Filed: Jun 28, 2010Published: Dec 30, 2010
Est. expiryJun 30, 2029(~2.9 yrs left)· nominal 20-yr term from priority
H10P 72/0424H10P 50/00G03F 7/423G03F 7/422
40
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Claims

Abstract

An apparatus for processing substrate includes a spin chuck, a first nozzle and a second nozzle. The spin chuck fixes and spins the substrate on which a photoresist layer is formed. The first nozzle is disposed over the spin chuck and provides a treatment liquid on the substrate so as to remove the photoresist layer. The second nozzle is disposed over the spin chuck and provides a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid. Therefore, efficiency of removing the photoresist layer may be improved.

Claims

exact text as granted — not AI-modified
1 . A method for processing a substrate, the method comprising:
 arranging the substrate on which a photoresist layer is formed;   providing a treatment liquid for removing the photoresist layer on the substrate; and   providing a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid.   
     
     
         2 . The method of  claim 1 , wherein the mist is formed by ultrasonic waves. 
     
     
         3 . The method of  claim 1 , wherein a temperature of the mist is between about 10° C. and about 99.9° C. 
     
     
         4 . The method of  claim 1 , wherein a particle size of the mist is between about 1 nm and about 100000 nm. 
     
     
         5 . The method of  claim 1 , wherein the mist is provided on the substrate using a carrier gas. 
     
     
         6 . The method of  claim 1 , wherein the treatment liquid and the mist are injected at the same time. 
     
     
         7 . The method of  claim 1 , wherein the treatment liquid and the mist make contact with each other before provided on the substrate. 
     
     
         8 . The method of  claim 1 , wherein the treatment liquid and the mist make contact with each other on the substrate. 
     
     
         9 . The method of  claim 1 , wherein the substrate spins, and the mist is provided in front of a position of the substrate at which the treatment liquid is provided. 
     
     
         10 . The method of  claim 1 , wherein the treatment liquid includes one of SPM (Sulfuric Acid/Peroxide), SOM (Sulfuric Acid/Ozone), SC-1 (NH4OH/Peroxide/Water), SC-2 (HCl/Peroxide/Water) and BOE (Buffered Oxide Etch: HF/NH4F). 
     
     
         11 . An apparatus for processing a substrate, the apparatus comprising:
 a spin chuck fixing and spinning the substrate on which a photoresist layer is formed;   a first nozzle disposed over the spin chuck and providing a treatment liquid on the substrate so as to remove the photoresist layer; and   a second nozzle disposed over the spin chuck and providing a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid.   
     
     
         12 . The apparatus of  claim 11 , wherein a number of the second nozzle is plural, and the second nozzles are disposed around the first nozzle. 
     
     
         13 . The apparatus of  claim 11 , wherein the second nozzle is disposed at a side of the first nozzle. 
     
     
         14 . The apparatus of  claim 11 , further comprising:
 a mist generation part connected with the second nozzle, and generating the mist using a ultrasonic vibration so as to provide the mist to the second nozzle.   
     
     
         15 . The apparatus of  claim 14 , further comprising:
 a carrier gas providing part connected with the mist generation part, and providing a carrier gas carrying the mist to the second nozzle.   
     
     
         16 . The apparatus of  claim 11 , wherein a temperature of the mist is between about 10° C. and about 99.9° C. 
     
     
         17 . The apparatus of  claim 11 , wherein a particle size of the mist is between about 1 nm and about 100000 nm. 
     
     
         18 . The apparatus of  claim 11 , wherein the treatment liquid is one of SPM, SOM, SC-1, SC-2 and BOE.

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