US2010309447A1PendingUtilityA1
lithographic apparatus, a projection system and a device manufacturing method
Est. expiryNov 30, 2027(~1.3 yrs left)· nominal 20-yr term from priority
Inventors:Yuri Johannes Gabriël Van De VijverJohannes Hubertus Josephina MoorsWendelin Johanna Maria VersteegPeter Geradus Jonkers
G03F 7/70883G03F 7/70916G03F 7/70866G03F 7/70841G03F 7/70933H10P 76/2042
50
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Claims
Abstract
A lithographic apparatus is disclosed that includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate, a vacuum chamber through which the patterned beam of radiation is projected during use, and a purge system configured to provide a purge gas flow in the chamber.
Claims
exact text as granted — not AI-modified1 . A lithographic apparatus comprising:
an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; a vacuum chamber through which the patterned beam of radiation is projected during use; and a purge system configured to provide a purge gas flow in the chamber.
2 . A projection system configured to project a patterned radiation beam onto a target portion of a substrate in a lithographic apparatus, wherein the projection system comprises a vacuum chamber wherein the patterned beam of radiation is projected during use and wherein the projection system further comprises a purge system configured to provide a purge gas flow in the chamber.
3 . The projection system of claim 2 , wherein the purge system comprises a purge inlet configured to supply a purge gas flow into the vacuum chamber.
4 . The projection system of claim 3 , wherein the purge inlet is arranged near a region that is critical for contamination particles.
5 . The projection system of claim 2 wherein the purge system further comprises a pump configured to receive the purge gas flow.
6 . The projection system of claim 5 , wherein the pump is near a contamination particle source.
7 . A device manufacturing method comprising projecting a patterned beam of radiation onto a substrate, wherein a purge gas flow is applied in a vacuum chamber through which the patterned beam of radiation is projected.
8 . The method of claim 7 , comprising further providing a purge gas flow path along but outside the patterned beam of radiation and directed away from the patterned beam of radiation.
9 . The method of claim 7 , comprising further providing a purge gas flow path from a section in a region of the chamber that is traversed by the patterned beam of radiation, towards the outside of the patterned beam of radiation.
10 . The method of claim 7 , comprising applying a hydrogen purge gas flow.
11 . The method of claim 10 , comprising applying the hydrogen purge gas flow in a region of the chamber that is traversed by the patterned beam of radiation.
12 . The method of claim 7 , comprising applying a halogen purge gas flow in a region of the chamber outside the patterned beam of radiation.
13 . The method of claim 7 , further comprising providing a purge gas flow along a surface of an optical device.
14 . The method of claim 13 , wherein the temperature of the purge gas flow provided along the surface of the optical device is colder than the temperature of the surface of the optical device.Join the waitlist — get patent alerts
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