Method for the single-sided polishing of bare semiconductor wafers

Abstract

Single-sided polishing of bare semiconductor wafers is accomplished by using a polishing head with a membrane made of a resilient material by which polishing pressure is transmitted onto the backside of the semiconductor wafer to be polished, wherein the semiconductor wafer is pressed against a polishing cloth with a smooth surface while supplying a polishing agent, and is prevented from sliding off the membrane by a retainer ring. The retainer ring is provided with channels on a side surface facing the polishing cloth.

1 . A method for the single-sided polishing of a bare semiconductor wafer comprising polishing with a polishing head with a membrane made of resilient material by which polishing pressure is transmitted onto the backside of the semiconductor wafer to be polished, wherein the front side of the semiconductor wafer is pressed against a polishing cloth with a smooth surface while supplying a polishing agent, and is prevented from sliding off the membrane by a retainer ring, wherein the retainer ring is provided with channels on a side surface thereof, facing the polishing cloth. 
     
     
         2 . The method of  claim 1 , wherein the retainer ring has at least 30 channels. 
     
     
         3 . The method of  claim 1 , wherein the semiconductor wafer is guided by means of a groove in the polishing cloth or the edge of the polishing cloth after the polishing and before lifting the polishing head from the polishing cloth, wherein the groove is not located on a portion of the polishing cloth which will contact the wafer surface during polishing. 
     
     
         4 . The method of  claim 2 , wherein the semiconductor wafer is guided by means of a groove in the polishing cloth or the edge of the polishing cloth after the polishing and before lifting the polishing head from the polishing cloth, wherein the groove is not located on a portion of the polishing cloth which will contact the wafer surface during polishing. 
     
     
         5 . The method of  claim 1 , wherein the polishing head is lifted from the polishing cloth after polishing with a speed which is no faster than 50 mm/min. 
     
     
         6 . The method of  claim 2 , wherein the polishing head is lifted from the polishing cloth after polishing with a speed which is no faster than 50 mm/min. 
     
     
         7 . The method of  claim 3 , wherein the polishing head is lifted from the polishing cloth after polishing with a speed which is no faster than 50 mm/min. 
     
     
         8 . The method of  claim 4 , wherein the polishing head is lifted from the polishing cloth after polishing with a speed which is no faster than 50 mm/min. 
     
     
         9 . The method of  claim 1 , wherein the semiconductor wafer is polished with the aid of a membrane comprising silicone. 
     
     
         10 . The method of  claim 2 , wherein the semiconductor wafer is polished with the aid of a membrane comprising silicone. 
     
     
         11 . The method of  claim 3 , wherein the semiconductor wafer is polished with the aid of a membrane comprising silicone. 
     
     
         12 . The method of  claim 4 , wherein the semiconductor wafer is polished with the aid of a membrane comprising silicone. 
     
     
         13 . The method of  claim 5 , wherein the semiconductor wafer is polished with the aid of a membrane comprising silicone. 
     
     
         14 . The method of  claim 6 , wherein the semiconductor wafer is polished with the aid of a membrane comprising silicone. 
     
     
         15 . The method of  claim 7 , wherein the semiconductor wafer is polished with the aid of a membrane comprising silicone. 
     
     
         16 . The method of  claim 8 , wherein the semiconductor wafer is polished with the aid of a membrane comprising silicone.