Semiconductor device with bonding pad

Abstract

A semiconductor device with a bonding pad is provided. The semiconductor device includes a first substrate having a device area and a bonding area, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are disposed on the upper surface of the first substrate in the device area. A first inter-metal dielectric layer is disposed on the upper surface of the substrate in the bonding area. A lowermost metal pattern is disposed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad, and the first substrate is exposed through an opening in the lowermost metal pattern.

1 . A semiconductor device with a bonding pad, comprising:
 a first substrate having a device area and a bonding area, wherein the first substrate has an upper surface and a bottom surface;   semiconductor elements disposed on the upper surface of the first substrate in the device area;   a first inter-metal dielectric layer on the upper surface of the substrate in the bonding area;   a lowermost metal pattern disposed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad;   an opening through the first substrate exposing the lowermost metal pattern; and   a bonding wire attached to the lowermost metal pattern through the opening.   
     
     
         2 . The semiconductor device with a bonding pad as claimed in  claim 1 , further comprising a scribe line area adjacent to the bonding area. 
     
     
         3 . The semiconductor device with a bonding pad as claimed in  claim 1 , wherein the semiconductor elements comprise CMOS image sensors. 
     
     
         4 . The semiconductor device with a bonding pad as claimed in  claim 1 , wherein the first inter-metal dielectric layer comprises a dielectric material having a dielectric constant less than 3.0. 
     
     
         5 . The semiconductor device with a bonding pad as claimed in  claim 1 , wherein the lowermost metal pattern comprises copper, aluminum, or an alloy thereof. 
     
     
         6 . The semiconductor device with a bonding pad as claimed in  claim 1 , wherein the lowermost metal pattern is electrically connected to the semiconductor elements. 
     
     
         7 . (canceled) 
     
     
         8 . The semiconductor device with a bonding pad as claimed in  claim 1 , further comprising:
 a second inter-metal dielectric layer on the lowermost metal pattern;   an intermediate metal pattern disposed in the second inter-metal dielectric layer;   a third inter-metal dielectric layer on the intermediate metal pattern;   an uppermost metal pattern disposed in the third inter-metal dielectric layer; and   a second substrate attached to the first substrate so that the semiconductor elements, the lowermost metal pattern and the uppermost metal pattern are interposed therebetween.   
     
     
         9 . The semiconductor device with a bonding pad as claimed in  claim 8 , wherein the first substrate and the second substrate comprise silicon. 
     
     
         10 . The semiconductor device with a bonding pad as claimed in  claim 8 , wherein the lowermost metal pattern is electrically connected to the intermediate metal pattern by a plurality of first via plugs. 
     
     
         11 . The semiconductor device with a bonding pad as claimed in  claim 8 , wherein the intermediate metal pattern is electrically connected to the uppermost metal pattern. 
     
     
         12 . The semiconductor device with a bonding pad as claimed in  claim 1 , further comprising an etching stop layer between the lowermost metal pattern and the upper surface of the first substrate. 
     
     
         13 . The semiconductor device with a bonding pad as claimed in  claim 1 , wherein the lowermost metal pattern comprises a titanium-free copper-aluminum alloy layer. 
     
     
         14 - 23 . (canceled) 
     
     
         24 . The semiconductor device with a bonding pad as claimed in  claim 1 , wherein the bonding wire is separated from a sidewall of the opening by a distance.