Semiconductor methods

Abstract

A method includes the steps of: (a) forming a conductive layer within a dielectric layer formed over a substrate; (b) forming a material layer over the conductive layer and the dielectric layer; (c) forming an opening within the material layer by an etch process to expose a portion of the dielectric layer and a top surface of the conductive layer; (d) forming a first metal-containing layer within the opening substantially covering sidewalls of the material layer and the exposed portion of the second dielectric layer; and (e) removing the material layer by an oxygen-containing plasma process to expose a portion of outer sidewalls of the first metal-containing layer.

1 . A method, comprising the steps of:
 (a) forming a conductive layer within a dielectric layer formed over a substrate;   (b) forming a material layer over the conductive layer and the dielectric layer;   (c) forming an opening within the material layer by an etch process to expose a portion of the dielectric layer and a top surface of the conductive layer;   (d) forming a first metal-containing layer within the opening substantially covering sidewalls of the material layer and the exposed portion of the second dielectric layer; and   (e) removing the material layer by an oxygen-containing plasma process to expose a portion of outer sidewalls of the first metal-containing layer.   
   
   
       2 . The method of  claim 1 , wherein the material layer comprises an amorphous carbon layer. 
   
   
       3 . The method of  claim 2 , wherein the material layer is formed by a deposition process comprising: a flow of C 3 H 6  between about 1,500 standard cubic centimeters per minute (sccm) and about 2,500 sccm; a flow of He between about 500 sccm and about 900 sccm; a radio-frequency (RF) power between about 1,200 watts and about 1,800 watts; and a pressure between about 4.5 Torr and about 5.5 Torr. 
   
   
       4 . The method of  claim 2 , wherein the etch process comprises: a flow of hydrogen (H 2 ) between about 80 standard cubic centimeters per minute (sccm) and about 150 sccm; a flow of nitrogen (N 2 ) between about 150 sccm and about 300 sccm; a radio-frequency (RF) power between about 800 watts and about 1,500 watts; and a pressure between about 15 mTorr and about 50 mTorr. 
   
   
       5 . The method of  claim 2 , wherein the oxygen-containing plasma process comprises: a flow of oxygen (O 2 ) between about 500 standard cubic centimeters per minute (sccm) and about 2,000 sccm; a radio-frequency (RF) power between about 200 watts and 2,000 watts; and a pressure between about 20 mTorr and 200 mTorr. 
   
   
       6 . The method of  claim 1 , further comprising:
 forming a high-k material layer substantially covering the exposed outer sidewalls, a top region and an inner sidewall of the first metal-containing layer; and   forming a second metal-containing layer substantially covering the high-k material layer.   
   
   
       7 . A method, comprising the steps of:
 (a) forming an opening within a first dielectric layer over a substrate, the opening exposing a substantial top surface of a pixel;   (b) forming a substantially conformal material layer over the first dielectric layer and the exposed top surface of the pixel;   (c) removing a portion of the material layer by an etch process to form spacers on sidewalls of the first dielectric layer;   (d) forming a second dielectric layer substantially filling within the opening;   (e) removing the spacers by an oxygen-containing plasma process to form gaps between the first and second dielectric layers; and   (f) forming a third dielectric material over the first and second dielectric layers to form air gaps.   
   
   
       8 . The method of  claim 7 , wherein the material layer comprises an amorphous carbon layer. 
   
   
       9 . The method of  claim 8 , wherein the material layer is formed by a deposition process comprising: a flow of C 3 H 6  between about 1,000 standard cubic centimeters per minute (sccm) and about 1,500 sccm; a flow of He between about 400 sccm and about 500 sccm; a radio-frequency (RF) power between about 800 watts and about 1,200 watts; and a pressure between about 3.5 Torr and about 4.5 Torr. 
   
   
       10 . The method of  claim 7 , wherein the etch process comprises: a flow of hydrogen (H 2 ) between about 80 standard cubic centimeters per minute (sccm) and about 150 sccm; a flow of nitrogen (N 2 ) between about 150 sccm and about 300 sccm; a radio-frequency (RF) power between about 800 watts and about 1,500 watts; and a pressure between about 15 mTorr and about 50 mTorr. 
   
   
       11 . The method of  claim 7 , wherein the oxygen-containing plasma process comprises: a flow of oxygen (O 2 ) between about 500 standard cubic centimeters per minute (sccm) and about 2,000 sccm; a radio-frequency (RF) power between about 200 watts and 2,000 watts; and a pressure between about 20 mTorr and 200 mTorr. 
   
   
       12 . The method of  claim 7 , wherein step (f) is performed by a plasma enhanced chemical vapor deposition (PECVD) process to seal top regions of the gaps to form the air gaps. 
   
   
       13 . A method, comprising the steps of:
 (a) forming a material layer covering a pair of transistor gates formed over a substrate;   (b) removing a portion of the material layer by an etch process to form an opening within the material layer and between the transistor gates to expose a partial top surface of the substrate;   (c) forming a conductive layer within the opening;   (d) removing the remaining material layer by an oxygen-containing plasma process to expose a top region of the conductive layer above top surfaces of the transistor gates; and   (e) forming a dielectric layer covering the transistor gates and the conductive layer to expose a top surface of the conductive layer.   
   
   
       14 . The method of  claim 13 , wherein the material layer comprises an amorphous carbon layer. 
   
   
       15 . The method of  claim 14 , wherein the material layer is formed by a deposition process comprising: a flow of C 3 H 6  between about 1,500 standard cubic centimeters per minute (sccm) and about 2,500 sccm; a flow of He between about 500 sccm and about 900 sccm; a radio-frequency (RF) power between about 1,200 watts and about 1,800 watts; and a pressure between about 4.5 Torr and about 5.5 Torr. 
   
   
       16 . The method of  claim 13 , wherein the etch process comprises: a flow of hydrogen (H 2 ) between about 80 standard cubic centimeters per minute (sccm) and about 150 sccm; a flow of nitrogen (N 2 ) between about 150 sccm and about 300 sccm; a radio-frequency (RF) power between about 800 watts and about 1,500 watts; and a pressure between about 15 mTorr and about 50 mTorr. 
   
   
       17 . The method of  claim 13 , wherein the oxygen-containing plasma process comprises: a flow of oxygen (O 2 ) between about 500 standard cubic centimeters per minute (sccm) and about 2,000 sccm; a radio-frequency (RF) power between about 200 watts and 2,000 watts; and a pressure between about 20 mTorr and 200 mTorr. 
   
   
       18 . The method of  claim 13 , wherein step (e) is performed by at least one process of a group consisting of a high density plasma chemical vapor deposition (HDP CVD) process, physical vapor deposition (PVD) process, atomic layer deposition (ALD) process and spin-on process.