Plating apparatuses and processes

Abstract

Plating apparatuses and plating processes. Plating apparatuses includes a plating station and a post plating treatment station adjacent to the plating station. The plating station comprises at least one plating cell and provides a first environment therein with a first relative humidity (RH) higher than that of a clean room where the plating apparatus is disposed. The post plating treatment station provides a second environment therein with a second RH lower than the first RH.

1 . A plating apparatus, comprising: 
 a plating station, comprising at least one plating cell, providing a first environment therein with a first relative humidity (RH) higher than that of a clean room where the plating apparatus is disposed; and    a post plating treatment station adjacent to the plating station, providing a second environment therein with a second RH lower than the first RH.    
   
   
       2 . The apparatus as claimed in  claim 1 , further comprising: 
 a loading station adjacent to the plating station; and    an unloading station adjacent to the post plating treatment station.    
   
   
       3 . The apparatus as claimed in  claim 1 , wherein the first RH is higher than 40%.  
   
   
       4 . The apparatus as claimed in  claim 1 , wherein the first RH is higher than 60%.  
   
   
       5 . The apparatus as claimed in  claim 1 , wherein the second RH is between 30% and 40%.  
   
   
       6 . The apparatus as claimed in  claim 1 , wherein the first RH is controlled by introduction of deionized vapor or wet nitrogen into the plating station.  
   
   
       7 . A plating process, comprising: 
 providing a wafer comprising a recess thereon;    plating a metal layer in the recess under a first relative humidity (RH) higher than that of a clean room for wafer fabrication; and    performing a post plating treatment procedure on the wafer under a second RH lower than the first RH.    
   
   
       8 . The method as claimed in  claim 7 , wherein the post plating treatment procedure further comprises: 
 Cleaning and drying the wafer; and    annealing the metal layer.    
   
   
       9 . The method as claimed in  claim 7 , wherein the first RH is higher than 40%.  
   
   
       10 . The method as claimed in  claim 7 , wherein the first RH is higher than 60%.  
   
   
       11 . The method as claimed in  claim 7 , wherein the second RH is between 30% and 40%.  
   
   
       12 . The method as claimed in  claim 7 , wherein the first RH is controlled by introduction of deionized vapor or wet nitrogen.  
   
   
       13 . The method as claimed in  claim 7 , wherein the metal layer is substantially copper.  
   
   
       14 . The method as claimed in  claim 7 , wherein the metal layer is formed by electroplating.