US2007042593A1PendingUtilityA1

Bonding pad structure and method of forming the same

Assignee: TAIWAN SEMICONDUCTOR MFGPriority: Apr 14, 2004Filed: Oct 27, 2006Published: Feb 22, 2007
Est. expiryApr 14, 2024(expired)· nominal 20-yr term from priority
H10W 72/9232H10W 72/983H10W 72/952H10W 72/934H10W 72/923H10W 72/536H10W 72/075H10W 72/59H10W 42/60H10W 72/019
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Claims

Abstract

A bonding pad structure and fabrication method thereof. A bonding pad is substantially surrounded and insulated by a dielectric layer, wherein the bonding pad is formed of at least one first conductive layer having a wiring layer with a stripe layout and a first edge portion, a second conductive layer having a wire bonding portion and a second edge portion and a plurality of plugs electrically connecting the wiring layer and the wire bonding portion. A conductive structure of an array of metal plugs or a metal damascene structure is formed to connect the first edge portion and the second edge portion, thereby preventing burn out of the first edge portion during an ESD event.

Claims

exact text as granted — not AI-modified
1 . A method of forming a bonding pad structure, comprising the steps of: 
 providing a bonding pad substantially surrounded and insulated by a dielectric layer, wherein the bonding pad is formed of at least one first conductive layer having a wiring layer with a stripe layout and a first edge portion, a second conductive layer having a wire bonding portion and a second edge portion and a plurality of plugs electrically connecting the wiring layer and the wire bonding portion; and    forming a conductive structure to connect the first edge portion and the second edge portion, thereby preventing burn out of the first edge portion during an ESD event.    
     
     
         2 . The method according to  claim 1 , further comprising the step of: 
 forming an electrostatic discharge (ESD) protection device electrically connected to the first conductive layer.    
     
     
         3 . The method according to  claim 1 , wherein a material of the dielectric layer is a low dielectric constant material.  
     
     
         4 . The method according to  claim 1 , wherein the first and second conductive layers are metal layers.  
     
     
         5 . The method according to  claim 1 , wherein the conductive structure is an array of metal plugs.  
     
     
         6 . The method according to  claim 1 , wherein the conductive structure is a metal damascene structure.  
     
     
         7 . A method of forming a bonding pad structure, comprising the steps of: 
 providing a substrate having an interlevel dielectric (ILD) layer thereon, forming a bonding pad on the ILD layer;    forming an intermetal dielectric (IMD) layer to surround and insulate the bonding pad, wherein the bonding pad is formed of at least one metal layer having a wiring layer with a stripe layout and a first edge portion, a bonding metal layer having a wire bonding portion and a second edge portion and a plurality of plugs electrically connecting the wiring layer and the wire bonding portion; and    forming a conductive structure to connect the first edge portion and the second edge portion, thereby preventing burn out of the first edge portion during an ESD event.    
     
     
         8 . The method according to  claim 7 , further comprising the step of: 
 an electrostatic discharge (ESD) protection device electrically connected to the first conductive layer.    
     
     
         9 . The method according to  claim 7 , wherein a material of the IMD layer is a low dielectric constant material.  
     
     
         10 . The method according to  claim 7 , wherein the conductive structure is an array of metal plugs.  
     
     
         11 . The method according to  claim 7 , wherein the conductive structure is a metal damascene structure.

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