Back-biased face target sputtering based memory with low oxygen flow rate

Abstract

Systems and methods are disclosed to form an exemplary memory structure by flowing argon gas and oxygen gas in a deposition chamber; providing a low oxygen flow rate approximately between 0 and ten percent (10%) of an argon flow rate, a pressure approximately between 2×10 −5 Torr and 1×10 −3 Torr, and a deposition temperature approximately between 340° C. and 450° C.; and the composition of sputtering target is PCMO (Pr 1-x Ca X MnO 3 , where X is between 0.1 and 0.9). The process forms a PCMO (Pr 1-x Ca X MnO 3 , X=0.1-0.9) material film on the wafer.

1 . A method for forming a semiconductor, comprising: 
 flowing argon gas and oxygen gas in a deposition chamber;    providing a low oxygen flow rate approximately between 0 and ten percent (10%) of an argon flow rate, a pressure approximately between 2×10 −5  Torr and 1×10 −3  Torr, and a deposition temperature approximately between 340° C. and 450° C.; and    providing a sputtering target made of PCMO (Pr 1-x Ca X MnO 3 , where X is between 0.1 and 0.9).    
   
   
       2 . The method of  claim 1 , wherein the PCMO material maintains a uniform ratio of Pr:Ca:Mn:O is across the PCMO material.  
   
   
       3 . The method of  claim 1 , comprising forming a poly-crystalline PCMO at a temperature below 400° C. with the low oxygen flow rate.  
   
   
       4 . The method of  claim 1 , comprising forming a memory device.  
   
   
       5 . The method of  claim 1 , wherein the PCMO structure comprises a layer of with a thickness of 2,000 Å or less.  
   
   
       6 . The method of  claim 1 , comprising depositing materials using a radio frequency (RF) rate of 13.56 Megahertz.  
   
   
       7 . The method of  claim 1 , comprising: 
 providing at least one target and a substrate having a film-forming surface portion and a back portion; creating a magnetic field so that the film-forming surface portion is placed in the magnetic field with the magnetic field induced normal to the substrate surface portion; back-biasing the back portion of the substrate; and sputtering material onto the film-forming surface portion, wherein the thin forming surface portion comprises non-volatile data storage devices interconnected thereto.    
   
   
       8 . A facing targets sputtering device for semiconductor fabrication, comprising: 
 an air-tight chamber in which an inert gas is admittable and exhaustible;    a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween;    a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; a back-bias power supply coupled to the substrate holder;    wherein the substrate includes one or more memory arrays formed thereon, wherein the argon gas and oxygen gas flows into the deposition chamber at a low oxygen flow rate approximately between 0 and ten percent (10%) of an argon flow rate, a pressure approximately between 2×10 −5  Torr and 1×10 −3  Torr, and a deposition temperature approximately between 340° C. and 450° C. on a sputtering target with PCMO (Pr 1-x Ca X MnO 3 , where X is between 0.1 and 0.9)    
   
   
       9 . A facing targets sputtering device according to  claim 11 , wherein the back-bias power supply is a DC or an AC electric power source.  
   
   
       10 . A facing targets sputtering device according to  claim 11 , further comprising a first target power supply coupled to one of the target plates.  
   
   
       11 . A facing targets sputtering device according to  claim 13 , wherein the first target power supply is a DC or an AC electric power source.  
   
   
       12 . A facing targets sputtering device according to  claim 11 , further comprising a second target power supply coupled to the remaining target plate.  
   
   
       13 . A facing targets sputtering device according to  claim 11 , wherein the first and second target power supplies comprises DC and AC electric power sources.  
   
   
       14 . A facing targets sputtering device according to  claim 11 , further comprising a robot arm to move the wafer.  
   
   
       15 . A facing targets sputtering device according to  claim 11 , further comprising a magnetron coupled to the chamber.  
   
   
       16 . A facing targets sputtering device according to  claim 11 , further comprising a chuck heater mounted above the wafer.  
   
   
       17 . The apparatus of  claim 11 , wherein the FTS further comprises first and second targets mounted in parallel.