Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication

Abstract

A method is disclosed for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate. A photoresist pattern is first formed on the substrate. A silicon-containing polymer layer is deposited over the photoresist pattern on the substrate. A thermal treatment is performed to form a cross-linked anti-etch shielding layer between the photoresist pattern and the silicon-containing layer. Then, the remaining silicon containing layer is removed. A plasma treatment is performed in order to increase an etch resistance of the cross-linked anti-etch shielding layer and the photoresist pattern.

1 . A method for forming an anti-etch shielding layer of a photoresist material on a semiconductor substrate, the method comprising: 
 forming at least one exposed patterned photoresist layer on the substrate; and    forming a silicon-containing polymer layer over the patterned photoresist layer on the substrate.    
   
   
       2 . The method of  claim 1  wherein the patterned photoresist layer has a critical dimension of line width less than 100nm.  
   
   
       3 . The method of  claim 1  wherein the patterned photoresist layer has a critical dimension of hole width less than 100nm.  
   
   
       4 . The method of  claim 1  further comprising: 
 thermally treating the patterned photoresist layer and the silicon-containing polymer layer to form an anti-etch shielding layer in the silicon-containing polymer layer over the patterned photoresist layer; and    removing the remaining silicon-containing polymer layer.    
   
   
       5 . The method of  claim 4  further comprising performing a plasma treatment on the anti-etch shielding layer and the patterned photoresist layer for increasing an etch resistance thereof.  
   
   
       6 . The method of  claim 5  wherein the plasma treatment is an O 2 , Ar, N 2 , or H 2  gas plasma treatment.  
   
   
       7 . The method of  claim 1  wherein the silicon-containing polymer layer is alcohol soluble.  
   
   
       8 . A method for forming an anti-etch shielding layer of a photoresist material on a semiconductor substrate, the method comprising: 
 forming at least one exposed patterned photoresist layer on the substrate; and    forming a metal-containing polymer layer over the patterned photoresist layer on the substrate.    
   
   
       9 . The method of  claim 8  further comprising: 
 thermally treating the patterned photoresist layer and the metal-containing polymer layer to form an anti-etch shielding layer in the metal-containing polymer layer over the patterned photoresist layer; and    removing the remaining metal-containing polymer layer.    
   
   
       10 . The method of  claim 8  wherein the metal-containing polymer layer comprises Ti, Ta, W, Al, Cu or Co.  
   
   
       11 . A method for forming an anti-etch shielding layer of a photoresist material on a semiconductor substrate, the method comprising: 
 forming at least one exposed patterned photoresist layer on the substrate; and    forming a polymer layer, which contains at least one Group IVA element of a chemistry periodic table, over the patterned photoresist layer on the substrate.    
   
   
       12 . The method of  claim 11  further comprising: thermally treating the patterned photoresist layer and the polymer layer to form an anti-etch shielding layer in the polymer layer over the patterned photoresist layer; and 
 removing the remaining polymer layer.    
   
   
       13 . The method of  claim 11  wherein the polymer layer comprises carbon, carbon double bond material, carbon triple bond material or silicon carbide.  
   
   
       14 . A method for forming a photoresist pattern with enhanced etch resistance on a semiconductor substrate, the method comprising: 
 forming at least one exposed patterned photoresist layer on the substrate;    depositing a water soluble polymer layer over the patterned photoresist layer on the substrate;    thermally treating the patterned photoresist layer and the water soluble polymer layer to induce an acid diffusion from the photoresist layer to form a cross-linked anti-etch shielding layer between the photoresist layer and the water soluble polymer layer;    removing the water soluble polymer layer; and    performing a plasma treatment on the cross-linked anti-etch shielding layer and the photoresist layer for enhancing the etch resistance of the cross-linked anti-etch shielding layer and the photoresist layer.    
   
   
       15 . The method of  claim 14  wherein the plasma treatment is an O 2 , Ar, N 2 , or H 2  gas plasma treatment.  
   
   
       16 . The method of  claim 14  wherein the water soluble polymer layer contains double-bond or triple-bond polymer.  
   
   
       17 . The method of  claim 14  wherein the water soluble polymer layer further includes Ti, Ta, F or Cl.  
   
   
       18 . The method of  claim 14  wherein the thermally treating is performed at a temperature ranged approximately from 85 to 150 degrees Celsius.  
   
   
       19 . The method of  claim 14  wherein the cross-linked anti-etch shielding layer is at least 10 angstroms in thickness.