US2006057765A1PendingUtilityA1
Image sensor including multiple lenses and method of manufacture thereof
Est. expirySep 13, 2024(expired)· nominal 20-yr term from priority
H10F 39/8053H10F 39/806H10F 39/024
44
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Claims
Abstract
A device includes an image sensing element. The device also includes a Silicon Dioxide (SiO 2 ) layer, located over the image sensing element, exhibiting a first index of refraction. The device further includes a first lens, located over the SiO 2 layer, exhibiting a second index of refraction greater than the first index of refraction. The device still further includes a color filter located over the first lens and a second lens located over the color filter.
Claims
exact text as granted — not AI-modified1 . A method for manufacturing an image sensor, the method comprising:
forming an image sensing element;
forming over the image sensing element, a Silicon Dioxide (SiO 2 ) layer exhibiting a first index of refraction;
forming over the SiO 2 layer, a first lens exhibiting a second index of refraction greater than the first index of refraction;
forming a color filter over the first lens; and
forming a second lens over the color filter.
2 . The method of claim 1 , wherein the first lens includes Silicon Nitride (SiN).
3 . The method of claim 1 , wherein the second index of refraction is approximately 2.01.
4 . The method of claim 1 , wherein the first index of refraction is approximately 1.46.
5 . The method of claim 1 , wherein the SiO 2 layer is formed by chemical vapor deposition (“CVD”)
6 . The method of claim 1 , wherein the first lens is formed by CVD.
7 . The method of claim 1 , wherein the SiO 2 layer is planarized.
8 . The method of claim 7 , wherein the SiO 2 layer is planarized by chemical-mechanical planarization (“CMP”).
9 . The method of claim 1 , wherein the SiO 2 layer is wet-etched.
10 . The method of claim 1 , wherein the color filter includes a resin.
11 . The method of claim 1 , wherein the color filter includes a polymer.
12 . A device comprising:
an image sensing element;
a Silicon Dioxide (SiO 2 ) layer, located over the image sensing element, exhibiting a first index of refraction;
a first lens, located over the SiO 2 layer, exhibiting a second index of refraction greater than the first index of refraction;
a color filter located over the first lens; and
a second lens located over the color filter.
13 . The device of claim 12 , wherein the first lens includes Silicon Nitride (SiN).
14 . The device of claim 12 , wherein the second index of refraction is approximately 2.01.
15 . The device of claim 12 , wherein the first index of refraction is approximately 1.46.
16 . The device of claim 12 , wherein the SiO 2 layer is formed by chemical vapor deposition (“CVD”).
17 . The device of claim 12 , wherein the first lens is formed by CVD.
18 . The device of claim 12 , wherein the SiO 2 layer is planarized.
19 . The device of claim 18 , wherein the SiO 2 layer is planarized by chemical-mechanical planarization (“CMP”).
20 . The device of claim 12 , wherein the SiO 2 layer is wet-etched.
21 . The device of claim 12 , wherein the color filter includes a resin.
22 . The device of claim 12 , and comprising:
one or more inter-metal-dielectric (“IMD”) layers.
23 . A device comprising:
an image sensing element; a first convex lens, located over the image sensing element; a color filter located over the first convex lens; and a second convex lens located over the color filter.
24 . The device of claim 1 wherein the first convex lens comprises a curved surface curving toward the image sensing element.
25 . The device of claim 1 wherein the second convex lens comprises a curved surface curving away from the first convex lens.
26 . The device of claim 1 wherein the first and second convex lenses each comprises a material selected from the group consisting of silicon nitride and silicon oxynitride.
27 . The device of claim 1 wherein the first and second convex lenses each comprises an index of refraction greater than that of surrounding materials.Join the waitlist — get patent alerts
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