Nickel alloy sputtering target

Abstract

A nickel alloy sputtering target containing 0.5 to 10 at % of tantalum in nickel, in which inevitable impurities excluding gas components are 100 wtppm or less. Provided is a nickel alloy sputtering target, and the manufacturing technology thereof, enabling the formation of a thermally stable silicide (NiSi) film, unlikely to cause the coagulation of films or excessive formation of silicides, having few generation of particles upon forming the sputtered film, having favorable uniformity and superior in the plastic workability to the target, and which is particularly effective for the manufacture of a gate electrode material (thin film).

1 : A nickel-tantalum alloy sputtering target for gate electrode material containing 0.5 to 10 at % of tantalum and residual nickel.  
     
     
         2 : A nickel-tantalum alloy sputtering target for gate electrode material containing 1 to 5 at % of tantalum and residual nickel.  
     
     
         3 - 10 . (canceled)  
     
     
         11 : A nickel-tantalum alloy sputtering target according to  claim 1 , wherein inevitable impurities in the target, excluding gas components, are 100 wtppm or less.  
     
     
         12 : A nickel-tantalum alloy sputtering target according to  claim 1 , wherein inevitable impurities in the target, excluding gas components, are 10 wtppm or less.  
     
     
         13 : A nickel-tantalum alloy sputtering target according to  claim 1 , wherein oxygen content in the target is 50 wtppm or less, and wherein nitrogen, hydrogen and carbon contents in the target are each 10 wtppm or less.  
     
     
         14 : A nickel-tantalum alloy sputtering target according to  claim 1 , wherein oxygen content in the target is 10 wtppm or less.  
     
     
         15 : A nickel-tantalum alloy sputtering target according to  claim 1 , wherein an initial magnetic permeability of in-plane direction of the target is 50 or more.  
     
     
         16 : A nickel-tantalum alloy sputtering target according to  claim 1 , wherein a maximum magnetic permeability on an initial magnetization curve of in-plane direction of the target is 100 or more.  
     
     
         17 : A nickel-tantalum alloy sputtering target according to  claim 1 , wherein an average crystal grain size of the target is 80 μm or less.  
     
     
         18 : A nickel-tantalum alloy sputtering target according to  claim 2 , wherein inevitable impurities in the target, excluding gas components, are 100 wtppm or less.  
     
     
         19 : A nickel-tantalum alloy sputtering target according to  claim 2 , wherein inevitable impurities in the target, excluding gas components, are 10 wtppm or less.  
     
     
         20 : A nickel-tantalum alloy sputtering target according to  claim 19 , wherein oxygen content in the target is 50 wtppm or less, and wherein nitrogen, hydrogen and carbon contents in the target are each 10 wtppm or less.  
     
     
         21 : A nickel-tantalum alloy sputtering target according to  claim 20 , wherein oxygen content in the target is 10 wtppm or less.  
     
     
         22 : A nickel-tantalum alloy sputtering target according to  claim 21 , wherein an initial magnetic permeability of in-plane direction of the target is 50 or more.  
     
     
         23 : A nickel-tantalum alloy sputtering target according to  claim 22 , wherein a maximum magnetic permeability on an initial magnetization curve of in-plane direction of the target is 100 or more.  
     
     
         24 : A nickel-tantalum alloy sputtering target according to  claim 23 , wherein an average crystal grain size of the target is 80 μm or less.  
     
     
         25 : A method of manufacturing a nickel-tantalum alloy sputtering target, comprising the steps of producing a target containing 0.5 to 10 at % of tantalum and residual nickel, and subjecting the target to a final heat treatment at a recrystallization temperature of up to 950° C.  
     
     
         26 : A method according to  claim 25 , wherein said target is produced containing 1 to 5 at % of tantalum and residual nickel.  
     
     
         27 : A method according to  claim 26 , wherein inevitable impurities in the target, excluding gas components, are 100 wtppm or less.  
     
     
         28 : A method according to  claim 27 , wherein oxygen content in the target is 50 wtppm or less, and wherein nitrogen, hydrogen and carbon contents in the target are each 10 wtppm or less.