US2005284572A1PendingUtilityA1

Heating system for load-lock chamber

Assignee: TAIWAN SEMICONDUCTOR MFGPriority: Jun 29, 2004Filed: Jun 29, 2004Published: Dec 29, 2005
Est. expiryJun 29, 2024(expired)· nominal 20-yr term from priority
H10P 72/0468H10P 72/0434H10P 72/0466H01J 37/32871Y10T137/0318
38
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Claims

Abstract

A system for heating a load-lock chamber, particularly that of a plasma etching system for etching semiconductor wafer substrates. The load-lock chamber heating system includes a heater that is provided in fluid communication with a gas supply which contains an inert gas such as nitrogen. A gas pump pumps the gas from the gas supply through the heater, and from the heater into the load-lock chamber. The gas heats the load-lock chamber to prevent or minimize condensation of corrosive etching gases onto the interior surfaces of the load-lock chamber as well as the surfaces of substrates contained therein.

Claims

exact text as granted — not AI-modified
1 . A system for preventing condensation of a gas in a chamber, comprising: 
 a gas source for containing an inert gas;    a heater provided in fluid communication with said gas source for fluid communication with the chamber and receiving the inert gas from said gas source and heating the inert gas; and    a pump provided in fluid communication with said heater for pumping the gas from said heater to the chamber.    
   
   
       2 . The system of  claim 1  further comprising a controller connected to said heater for operating said heater.  
   
   
       3 . The system of  claim 1  further comprising a controller connected to said pump for operating said pump.  
   
   
       4 . The system of  claim 3  wherein said controller is further connected to said heater for operating said heater.  
   
   
       5 . A method of preventing condensation of a gas in a chamber, comprising the steps of: 
 providing a heater in fluid communication with the chamber;    heating a heating gas by distributing said heating gas through said heater; and    distributing said heating gas from said heater into the chamber.    
   
   
       6 . The method of  claim 5  wherein said heating gas comprises nitrogen.  
   
   
       7 . The method of  claim 5  wherein said heating said heating gas comprises heating said heating gas to a temperature of from about 70 degrees C. to about 100 degrees C.  
   
   
       8 . The method of  claim 7  wherein said heating gas comprises nitrogen.  
   
   
       9 . The method of  claim 5  wherein said distributing said heating gas from said heater into the chamber comprises distributing said heating gas from said heater into the chamber at a flow rate of from about 20 sccm to about 100 sccm.  
   
   
       10 . The method of  claim 9  wherein said heating gas comprises nitrogen.  
   
   
       11 . The method of  claim 9  wherein said heating said heating gas comprises heating said heating gas to a temperature of from about 70 degrees C. to about 100 degrees C.  
   
   
       12 . The method of  claim 11  wherein said heating gas comprises nitrogen.  
   
   
       13 . A method of preventing condensation of a gas in a load-lock chamber, comprising the steps of: 
 providing a heater in fluid communication with the load-lock chamber;    heating a heating gas to a gas temperature by distributing said heating gas through said heater; and    distributing said heating gas from said heater into the chamber at a gas flow rate.    
   
   
       14 . The method of  claim 13  wherein said heating gas comprises nitrogen.  
   
   
       15 . The method of  claim 13  wherein said gas temperature is from about 70 degrees C. to about 100 degrees C.  
   
   
       16 . The method of  claim 15  wherein said heating gas comprises nitrogen.  
   
   
       17 . The method of  claim 13  wherein said gas flow rate is about 20 sccm to about 100 sccm.  
   
   
       18 . The method of  claim 17  wherein said gas temperature is from about 70 degrees C. to about 100 degrees C.  
   
   
       19 . The method of  claim 17  wherein said heating gas comprises nitrogen.  
   
   
       20 . The method of  claim 19  wherein said gas temperature is from about 70 degrees C. to about 100 degrees C.

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