Method and compositions for hardening photoresist in etching processes

Abstract

A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.

1 - 13 . (canceled)  
   
   
       14 . A composition of a high density plasma for curing a photoresist material on a wafer in a plasma processing tool, the composition including bromine.  
   
   
       15 . (canceled)  
   
   
       16 . A composition for etching a wafer having a pattern of photoresist material thereon, comprising: a fluorocarbon and a bromine containing molecule.  
   
   
       17 . The composition, as recited in  claim 14 , wherein the composition is essentially pure bromine.  
   
   
       18 . The composition, as recited in  claim 17 , further comprising a composition for etching the wafer under the photoresist material, comprising a fluorocarbon and a bromine containing molecule.