Hydrogen barrier layer and method for fabricating semiconductor device having the same

Abstract

The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: forming a capacitor on an upper portion of a substrate providing a transistor; forming a first hydrogen barrier layer covering the capacitor, the first hydrogen barrier layer containing Al and Ti; forming a metal line connecting the capacitor to the transistor; forming a second hydrogen barrier layer containing Al and Ti on the metal line; and forming a protection layer on the second hydrogen barrier layer.

1 . A semiconductor device comprising a hydrogen barrier layer for preventing hydrogen from diffusing into a capacitor, wherein the hydrogen barrier layer includes titanium (Ti) and oxygen (O 2 ) to aluminum (Al).  
   
   
       2 . The semiconductor device as recited in  claim 1 , wherein the a hydrogen barrier layer prevents hydrogen from diffusing into a capacitor in processes for forming an insulating layer or a protection layer over the capacitor.  
   
   
       3 . The semiconductor device as recited in  claim 1 , wherein the complex oxide material has a compositional ratio of Al ranging from about 50 at % to about 90 at %, a compositional ratio of Ti ranging from about 10 at % to about 50 at % and a compositional ratio of O 2  ranging from about 1 at % to about 80 at %.  
   
   
       4 . A method for forming a hydrogen barrier layer, comprising the steps of: 
 loading a substrate to a deposition chamber; and    supplying Al and Ti sources and a reaction gas to the deposition chamber so to deposit a complex oxide material includes Ti and O 2  to Al on the substrate.    
   
   
       5 . The method as recited in  claim 4 , wherein the Al source is AlX 3 , where X is any one substrate selected from a group consisting of H, alkyl having about 1 to 10 carbon branches, alkenyl having about 2 to 10 carbon branches, alkoxy having about 1 to 8 carbon branches, aryl having about 6 to 12 carbon branches, β-diketonates, cyclopentadienyl, alkylcyclopentadienyl having about 1 to 8 carbon branches and derivatives of the above listed substrates added with one of halogen elements.  
   
   
       6 . The method as recited in  claim 4 , wherein the Ti source is either TiX 4  or TiX 2 , where X is any one substrate selected from a group consisting of H, alkyl having about 1 to 10 carbon branches, alkenyl having about 2 to 10 carbon branches, alkoxy having about 1 to 8 carbon branches, aryl having about 6 to 12 carbon branches, β-diketonates, cyclopentadienyl, alkylcyclopentadienyl having about 1 to 8 carbon branches and derivatives of the above listed substrates added with one of halogen elements.  
   
   
       7 . The method as recited in  claim 4 , wherein the reaction gas uses such gas as O 2 , N 2 O, NH 3 , H 2 O, H 2 O 2 , ROH, RCOOH, diol having about 2 to 10 carbon branches or a mixed gas of the above gases, and the R is any one substrate selected from a group consisting of H, alkyl having about 1 to 10 carbon branches, alkenyl having about 2 to 10 carbon branches, alkoxy having about 1 to 8 carbon branches, aryl having about 6 to 12 carbon braches and derivatives of the above listed substrates added with one of halogen elements.  
   
   
       8 . The method as recited in  claim 4 , wherein the complex oxide material is formed to a thickness ranging from about 200 Å to about 1000 Å at a temperature ranging from about 100° C. to about 900° C.  
   
   
       9 . A method for fabricating a semiconductor device having a hydrogen barrier layer, comprising the steps of: 
 forming a capacitor on a substrate including a transistor; and    forming a first hydrogen barrier layer covering the capacitor, the first hydrogen barrier layer containing Al and Ti.    
   
   
       10 . The method as recited in  claim 9 , wherein the step of forming the hydrogen barrier layer employs either an atomic layer deposition (ALD) technique or a chemical vapor deposition (CVD) technique.  
   
   
       11 . the method as recited in  claim 9 , after forming the first hydrogen barrier layer, further comprising the steps of: 
 forming a metal line connecting the capacitor to the transistor;    forming a second hydrogen barrier layer containing Al and Ti on the metal line; and    forming a protection layer on the second hydrogen barrier layer.