Inventor · disambiguated record
Dong-Soo Yoon
Also filed as: YOON DONG-SOO
7 granted patents·3 pending applications·64 citations·filing 2002–2005
83Inventor score
Files withHYNIX SEMICONDUCTOR INC8
Top patents by PatentIndex Score
10 records- 0182US6864191B2Hydrogen barrier layer and method for fabricating semiconductor device having the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 8, 2005·32 cites·13 claims
- 0271US6900095B2Hydrogen barrier layer and method for fabricating semiconductor device having the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted May 31, 2005·16 cites·10 claims
- 0358US6764899B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jul 20, 2004·7 cites·12 claims
- 0452US6818522B2Method for forming capacitor of semiconductor device with RuTiN and RuTiO diffusion barrierHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 16, 2004·4 cites·19 claims
- 0549US6902983B2Method for manufacturing semiconductor device and capacitorHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 7, 2005·3 cites·15 claims
- 0645US7105883B2Semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Sep 12, 2006·1 cites·11 claims
- 0745US6706627B2Method of manufacturing capacitor with a diffusion barrier containing ruthenium, titanium and nitrogenHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 16, 2004·1 cites·12 claims
- 0841US2005191849A1Hydrogen barrier layer and method for fabricating semiconductor device having the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 0933US2003203567A1Method of fabricating capacitor with two step annealing in semiconductor deviceFiled 2002·Application pending·0 cites
- 1033US2003214039A1Method for fabricating semiconductor device having tertiary diffusion barrier layer for copper lineFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →