Method for cleaning substrates using supercritical fluids

Abstract

A method for cleaning substrates typically after a CMP process is carried out thereon. The method includes providing a cleaning chamber, providing a substrate to be cleaned in the cleaning chamber, providing the chamber at temperature and pressure conditions favorable for formation of a supercritical cleaning fluid therein, and introducing the liquid or gaseous fluid into the chamber to form the supercritical cleaning fluid therein. The supercritical fluid removes particles and residues from the substrate without causing the formation of voltage potentials which may otherwise cause galvanic corrosion of metal lines or other device features on the substrates in the case of wet-cleaning applications.

1 . A method of cleaning substrates, comprising the steps of: 
 providing a cleaning fluid;    forming a supercritical cleaning fluid from said cleaning fluid; and    contacting the substrate with said supercritical cleaning fluid.    
     
     
         2 . The method of  claim 1  wherein said cleaning fluid is carbon dioxide.  
     
     
         3 . The method of  claim 1  wherein said contacting the substrate with said supercritical cleaning fluid comprises the step of contacting the substrate with said supercritical cleaning fluid for about 5-10 minutes.  
     
     
         4 . The method of  claim 3  wherein said cleaning fluid is carbon dioxide.  
     
     
         5 . The method of  claim 1  further comprising the step of mixing a solvent with said cleaning fluid prior to said forming a supercritical cleaning fluid from said cleaning fluid.  
     
     
         6 . The method of  claim 5  wherein said cleaning fluid is carbon dioxide.  
     
     
         7 . The method of  claim 1  wherein said supercritical cleaning fluid is non-conductive.  
     
     
         8 . The method of  claim 1  wherein said cleaning fluid is selected from the group consisting of methane, ethane, propane, ammonia, nitric oxide, fluoromethane and difluoromethane.  
     
     
         9 . The method of  claim 8  wherein said solvent is an alcohol.  
     
     
         10 . The method of  claim 1  wherein each of said substrates comprises exposed N-doped and P-doped regions.  
     
     
         11 . The method of  claim 1  wherein each of said substrates comprises an exposed conductive layer.  
     
     
         12 . The method of  claim 11  wherein each of said substrates comprises exposed N-doped and P-doped regions and an exposed conductive layer.  
     
     
         13 . A method of cleaning a substrate, comprising the steps of: 
 providing fluid carbon dioxide;    forming a supercritical carbon dioxide from said fluid carbon dioxide; and    contacting the substrate with said supercritical carbon dioxide.    
     
     
         14 . The method of  claim 13  further comprising the step of mixing a solvent with said fluid carbon dioxide to define a fluid mixture prior to said forming a supercritical carbon dioxide from said fluid carbon dioxide.  
     
     
         15 . The method of  claim 13  wherein said supercritical carbon dioxide is non-conductive.  
     
     
         16 . The method of  claim 13  wherein said substrate comprises exposed N-doped and P-doped regions and an exposed conductive layer.  
     
     
         17 . A method of cleaning a substrate, comprising the steps of: 
 providing a cleaning fluid selected from the group consisting of methane, ethane, propane, ammonia, nitric oxide, fluoromethane and difluoromethane;    forming a supercritical cleaning fluid from said cleaning fluid; and    contacting the substrate with said supercritical cleaning fluid.    
     
     
         18 . The method of  claim 17  further comprising the step of mixing a solvent with said cleaning fluid to define a fluid mixture prior to said forming a supercritical cleaning fluid from said cleaning fluid.  
     
     
         19 . The method of  claim 17  wherein said supercritical cleaning fluid is non-conductive.  
     
     
         20 . The method of  claim 17  wherein said substrate comprises exposed N-doped and P-doped regions and an exposed conductive layer.