Apparatus for the prevention of arcing in a CVD-TiN chamber

Abstract

A chemical vapor deposition apparatus for titanium-nitride application that is useful for preventing contaminants caused by arching between a substantially planar substrate and a substrate supporting apparatus during the deposition cycle. The apparatus includes a chemical vapor deposition chamber having a substrate-supporting heater. An annular housing supported by the heater, and a conductive strap that connectively secures the substrate-supporting heater to the annular housing by using holes instead of conventional slots. The conductive strap is designed as a flexure to flex with process temperature changes to improve electrical connectivity at its terminal connection and to prevent degradation. The annular housing has a top and a bottom surface and a cylindrical wall extending peripherally below the surfaces. The cylindrical wall encircles an isolator ring. The isolator ring is in contact with the bottom surface of the annular housing, and is placed and supported by at least three lift screws extending above the heater surface.

1 . A substrate processing apparatus for processing a semiconductor substrate comprising: 
 a vacuum chamber, and    a heater assembly disposed within the vacuum chamber, the heater assembly comprising: 
 a heater having a supporting surface;  
 an annular housing supported by the heater, the annular housing having a top surface and a bottom surface and a cylindrical wall extending peripherally below the top surface and the bottom surface;  
 an isolating ring encircled by the cylindrical wall, the isolating ring in contact with the bottom surface of the annular housing and the supporting heater surface of the heater, and  
 a conductive strap electrically connecting the annular housing to the heater through screw holes in place of slots.  
   
   
   
       2 . The substrate processing apparatus of  claim 1  wherein the isolating ring is a single isolating ring.  
   
   
       3 . The substrate processing apparatus of  claim 1  wherein the isolating ring directs an electrical potential difference to pass under the annular housing and into the heater.  
   
   
       4 . The substrate processing apparatus of  claim 2  wherein the single isolating ring eliminates spacer washers.  
   
   
       5 . The substrate processing apparatus of  claim 1  wherein the vacuum chamber is a metal-containing film deposition chamber.  
   
   
       6 . The substrate processing apparatus of  claim 1  wherein the annual housing is supported by at least three lift pins extending above the supporting heater surface of the heater.