Process for polishing a semiconductor wafer

Abstract

A process is for the simultaneous polishing of the front surface and the back surface of a semiconductor wafer between two rotating polishing plates covered with polishing cloth while a polishing fluid is supplied, the polishing cloth of the lower polishing plate having a smooth surface and the polishing cloth of the upper polishing plate having a surface which is interrupted by channels. The semiconductor wafer lying in a cutout in a carrier plate is held on a defined geometric path. The front surface of the semiconductor wafer, during polishing, is in contact with the polishing cloth of the lower polishing plate. The back surface of the semiconductor wafer, during polishing, is in contact with the polishing cloth of the upper polishing plate.

What is claimed is:  
     
         1 . A process for the simultaneous polishing of a front surface and a back surface of a semiconductor wafer between two rotating polishing plates covered with polishing cloth while a polishing fluid is supplied, 
 the polishing cloth of a lower polishing plate having a smooth surface and the polishing cloth of an upper polishing plate having a surface which is interrupted by channels, and said semiconductor wafer lying in a cutout in a carrier plate and being held on a defined geometric path,    wherein the front surface of the semiconductor wafer, during polishing, is in contact with the polishing cloth of the lower polishing plate, and    wherein the back surface of the semiconductor wafer, during polishing, is in contact with the polishing cloth of the upper polishing plate.    
     
     
         2 . The process as claimed in  claim 1 , 
 wherein following the simultaneous polishing of the front surface and the back surface of the semiconductor wafer,    transferring said semiconductor wafer into an aqueous bath with the aid of a vacuum suction means.    
     
     
         3 . The process as claimed in  claim 1 , comprising 
 subjecting the front surface of the semiconductor wafer to final polishing following the simultaneous polishing of the front surface and the back surface.    
     
     
         4 . The process as claimed in  claim 1 , 
 wherein the semiconductor wafer is a silicon wafer.    
     
     
         5 . The process as claimed in  claim 1 , 
 wherein the semiconductor wafer is placed into the cutout in the carrier plate with the front surface in a facing downward orientation, and    polishing said wafer in said downward orientation.