US2004118344A1PendingUtilityA1

System and method for controlling plasma with an adjustable coupling to ground circuit

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Assignee: LAM RES CORPPriority: Dec 20, 2002Filed: Dec 20, 2002Published: Jun 24, 2004
Est. expiryDec 20, 2022(expired)· nominal 20-yr term from priority
Inventors:Tuqiang NiWenli Collison
H10P 72/0402H10P 72/0421H10P 50/242H01J 37/32082H01J 37/32174H01J 37/32577H01J 37/32091H01J 37/32697H01J 37/32935
42
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Claims

Abstract

A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A semiconductor chamber configured to generate a plasma, said semiconductor chamber comprising: 
 a powered electrode configured to receive a wafer or substrate;    at least one electrode configured to generate an electrical connection with said powered electrode, said at least one electrode having a variable impedance; and    an adjustable coupling to ground circuit electrically coupled to said at least one electrode, said adjustable coupling to ground circuit configured to modify said variable impedance of said at least one electrode    
     
     
         2 . The plasma processing chamber of  claim 1  further comprising at least one confinement ring configured to confine said plasma.  
     
     
         3 . The plasma processing chamber of  claim 1  wherein said adjustable coupling to ground circuit comprises at least one capacitor.  
     
     
         4 . The plasma processing chamber of  claim 3  wherein said at least one capacitor comprises a variable capacitor.  
     
     
         5 . The plasma processing chamber of  claim 1  wherein said adjustable coupling to ground circuit comprises at least one inductor.  
     
     
         6 . The plasma processing chamber of  claim 4  wherein said at least one inductor comprises a variable-inductor.  
     
     
         7 . The plasma processing chamber of  claim 1  wherein said adjustable coupling to ground circuit comprises at least one inductor and one capacitor.  
     
     
         8 . A semiconductor chamber configured to generate a plasma, said semiconductor chamber comprising: 
 a powered electrode configured to receive a wafer or substrate;    a first electrode configured to generate an electrical connection with said powered electrode, said first electrode having a first impedance; and    if a second electrode configured to generate another electrical connection with said powered electrode, said second electrode have a second impedance.    
     
     
         9 . The method of  claim 8  wherein said first impedance is different from said second impedance.  
     
     
         10 . The plasma processing chamber of  claim 9  further comprising at least one confinement ring configured to confine said plasma.  
     
     
         11 . The semiconductor chamber of  claim 10  further comprising a first adjustable coupling to ground circuit electrically coupled to said first electrode, said adjustable coupling to ground circuit configured to determine said first impedance.  
     
     
         12 . The plasma processing chamber of  claim 11  wherein said adjustable coupling to ground circuit comprises at least one capacitor.  
     
     
         13 . The plasma processing chamber of  claim 12  wherein said at least one capacitor comprises a variable capacitor.  
     
     
         14 . The plasma processing chamber of  claim 11  wherein said adjustable coupling to ground circuit comprises at least one inductor.  
     
     
         15 . The plasma processing chamber of  claim 14  wherein said at least one inductor comprises a variable inductor.  
     
     
         16 . The plasma processing chamber of  claim 11  wherein said adjustable coupling to ground circuit comprises at least one inductor and one capacitor.  
     
     
         17 . A method for controlling a plasma in a plasma processing chamber, comprising: 
 causing a powered electrode to receive a wafer or substrate, said powered electrode electrically coupled to a power supply;    generating a plasma by electrically coupling said powered electrode to at least one other electrode having an adjustable coupling to ground circuit, said plasma having an ion energy and a plasma density; and    controlling said ion-energy with said adjustable coupling to ground circuit.    
     
     
         18 . The method of  claim 17  wherein said controlling of said ion energy is conducted by modifying an impedance for said adjustable coupling to ground circuit.  
     
     
         19 . The method of  claim 17  further comprising controlling said plasma density with said power supply.  
     
     
         20 . The method of  claim 18  wherein said adjustable coupling to ground circuit comprises a capacitor.  
     
     
         21 . The method of  claim 18  wherein said adjustable coupling to ground circuit comprises an inductor.  
     
     
         22 . The method of  claim 18  wherein said adjustable coupling to ground circuit comprises a capacitor and an inductor.

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