US2004058623A1PendingUtilityA1

Polishing media for chemical mechanical planarization (CMP)

Assignee: LAM RES CORPPriority: Sep 20, 2002Filed: Feb 14, 2003Published: Mar 25, 2004
Est. expirySep 20, 2022(expired)· nominal 20-yr term from priority
B24D 3/32B24D 3/348B24B 37/22B24B 37/24
41
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A polishing media for chemical mechanical planarization (CMP) includes a layer comprised of a CMP pad material having a water-soluble material comprised of cyclodextrin dispersed therein. The layer may form part of a pad configured for rotary CMP or part of a belt pad configured for linear CMP. In one method for conducting a CMP operation, a polishing media having a layer comprised of a CMP pad material with a water-soluble material comprised of cyclodextrin dispersed therein is contacted with a slurry, water, or an aqueous solution to remove the water-soluble material comprised of cyclodextrin from the CMP pad material. In another method, the water-soluble material comprised of cyclodextrin is removed from the CMP pad material before the CMP operation.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A polishing media for chemical mechanical planarization (CMP), comprising: 
 a layer comprised of a CMP pad material having a water-soluble material comprised of cyclodextrin dispersed therein.    
     
     
         2 . The polishing media of  claim 1 , wherein the CMP pad material is comprised of a thermoplastic material selected from the group consisting of polyurethane, polyurea, polyester, polyacrylate, and polyvinyl chloride.  
     
     
         3 . The polishing media of  claim 1 , wherein the layer forms part of a pad configured for rotary CMP.  
     
     
         4 . The polishing media of  claim 1 , wherein the layer forms part of a belt pad configured for linear CMP.  
     
     
         5 . The polishing media of  claim 1 , wherein the layer contains 1% by volume to 60% by volume of the water-soluble material comprised of cyclodextrin.  
     
     
         6 . The polishing media of  claim 1 , wherein the layer is formed by a fabrication process including one of spray coating, extrusion, molding, and casting.  
     
     
         7 . A polishing media for chemical mechanical planarization (CMP), comprising: 
 a layer comprised of a polyurethane-based material having a water-soluble material comprised of cyclodextrin dispersed therein.    
     
     
         8 . The polishing media of  claim 7 , wherein the layer forms part of a pad configured for rotary CMP.  
     
     
         9 . The polishing media of  claim 7 , wherein the layer forms part of a belt pad configured for linear CMP.  
     
     
         10 . The polishing media of  claim 7 , wherein the layer contains 1% by volume to 60% by volume of the water-soluble material comprised of cyclodextrin.  
     
     
         11 . The polishing media of  claim 7 , wherein the layer is formed by a fabrication process including one of spray coating, extrusion, molding, and casting.  
     
     
         12 . A method for conducting a chemical mechanical planarization (CMP) operation, comprising: 
 providing a polishing media having a layer comprised of a CMP pad material with a water-soluble material comprised of cyclodextrin dispersed therein; and    contacting the layer with at least one of a slurry, water, and an aqueous solution to remove the water-soluble material comprised of cyclodextrin from the CMP pad material.    
     
     
         13 . The method of  claim 12 , wherein the layer has an overall porosity in a range from 1% to 60%.  
     
     
         14 . The method of  claim 12 , wherein the contacting of the layer with at least one of the slurry, water, and the aqueous solution occurs in a rotary CMP operation.  
     
     
         15 . The method of  claim 12 , wherein the contacting of the layer with at least one of the slurry, water, and the aqueous solution occurs in a linear CMP operation.  
     
     
         16 . The method of  claim 12 , wherein the CMP pad material is comprised of a thermoplastic material selected from the group consisting of polyurethane, polyurea, polyester, polyacrylate, and polyvinyl chloride.  
     
     
         17 . A method for conducting a chemical mechanical planarization (CMP) operation, comprising: 
 providing a polishing media having a layer comprised of a CMP pad material with a water-soluble material comprised of cyclodextrin dispersed therein;    removing the water-soluble material comprised of cyclodextrin from the layer; and    contacting the layer with a substrate in the presence of a slurry to planarize the substrate.    
     
     
         18 . The method of  claim 17 , wherein the layer has an overall porosity in a range from 1% to 60%.  
     
     
         19 . The method of  claim 17 , wherein the contacting of the layer with the substrate occurs in a rotary CMP operation.  
     
     
         20 . The method of  claim 17 , wherein the contacting of the layer with the substrate occurs in a linear CMP operation.  
     
     
         21 . The method of  claim 17 , wherein the CMP pad material is comprised of a thermoplastic material selected from the group consisting of polyurethane, polyurea, polyester, polyacrylate, and polyvinyl chloride.

Join the waitlist — get patent alerts

Track US2004058623A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.