Scanning type etcher design for precision process control

Abstract

An apparatus and method for controllably etching a semiconductor wafer fabricated by a semiconductor processing system. Generally, an etcher is associated with the semiconductor processing system, such that etcher includes one or more electrodes thereof. An electrode position monitor can then be utilized for monitoring a position of the electrode, thereby permitting an adjustable size control of the etch head, which is controllable according to an associated etching recipe. The etch head is generally moveable according to a step mode. Such an arrangement thus increases wafer uniformity and precision process control during wafer fabrication and etching.

What is claimed is:  
     
         1 . An apparatus for controllably etching a semiconductor wafer fabricated by a semiconductor processing system, said apparatus comprising: 
 an etcher associated with said semiconductor processing system, wherein said etcher comprises at least one electrode thereof;    an electrode position monitor for monitoring a position of said at least one electrode thereof to thereby permit an adjustable size control of said etch head controllable according to an associated etching recipe; and    wherein said etch head is moveable according to a step mode thereby promoting increased uniformity and precision process control across said semiconductor wafer during fabrication thereof.    
     
     
         2 . The apparatus of  claim 1  wherein said etch head comprises a moveable etch head.  
     
     
         3 . The apparatus of  claim 1  wherein said gas output device comprises a square-shaped gas output device.  
     
     
         4 . The apparatus of  claim 1  wherein said gas output device comprises a rectangular-shaped gas output device.  
     
     
         5 . The apparatus of  claim 1  wherein said at least one electrode comprises a top electrode associated with said etch head.  
     
     
         6 . The apparatus of  claim 1  wherein said at least one electrode comprises a bottom electrode associated with said etch head.  
     
     
         7 . The apparatus of  claim 1  further comprising: 
 a gas output device associated with said etch head.  
 
     
     
         8 . The apparatus of  claim 1  wherein said electrode position monitor comprises: 
 a high voltage apparatus associated with said at least one electrode which provides high voltage data to a main controller;  
 a display device linked to said main controller which provides display data indicating whether or not a position of said at least one electrode is satisfactory.  
 
     
     
         9 . The apparatus of  8  wherein said high voltage apparatus comprises: 
 an encoder connected to said at least one electrode through a first extension rod;  
 a motor connected to a second extension rod;  
 a chain which is located about said first and second extension rods;  
 a high voltage controller comprising a DC input signal module, wherein said signal module device is connected to said encoder.  
 
     
     
         10 . The apparatus of  claim 9  wherein said electrode position monitor further comprises; 
 a fiber optical cable connecting said high voltage apparatus to said main controller; and  
 a resistor located between said main controller and said display device, wherein said main controller comprises a DC output module.  
 
     
     
         11 . The apparatus of  claim 10  wherein said display device comprises an LED display device.  
     
     
         12 . The apparatus of  claim 1  further comprising; 
 a motor associated with said etcher and said electrode position monitor.  
 an encoder connected to said at least one electrode and which communicates with said motor;  
 a gear assembly associated with said motor and said at least one electrode.  
 
     
     
         13 . The apparatus of  claim 1  wherein said etcher comprises a scanning-type etcher.  
     
     
         14 . The apparatus of  claim 1  wherein said etch head comprises at least two tubes for gas suction, wherein said at least two tubes are located external to said etch head.  
     
     
         15 . A method for controllably etching a semiconductor wafer fabricated by a semiconductor processing system, said method comprising the steps of: 
 associating an etcher associated with a semiconductor processing system, wherein said etcher comprises at least one electrode thereof;    monitoring a position of said at least one electrode thereof utilizing an electrode position monitor to thereby permit an adjustable size control of said etch head controllable according to an associated etching recipe; and    moving said etch head according to a step mode, thereby promoting increased uniformity and precision process control across said semiconductor wafer during fabrication thereof.    
     
     
         16 . The method of  claim 15  wherein said etch head comprises a moveable etch head.  
     
     
         17 . The method of  claim 15  further comprising the step of: 
 configuring said gas output device as a square-shaped gas output device.  
 
     
     
         18 . The method of  claim 15  further comprising the step of: 
 configuring said gas output device as a rectangular-shaped gas output device.  
 
     
     
         19 . The method of  claim 15  wherein further comprising the step of: 
 configuring said at least one electrode as a top electrode associated with said etch head.  
 
     
     
         20 . The method of  claim 15  further comprising the step of: 
 configuring said at least one electrode as a bottom electrode associated with said etch head.  
 
     
     
         21 . The method of  claim 15  further comprising the step of: 
 associating a gas output device with said etch head.  
 
     
     
         22 . The method of  claim 15  further comprising the step of: 
 configuring said electrode position monitor to comprise: 
 a high voltage apparatus associated with said at least one electrode which provides high voltage data to a main controller; and  
 a display device linked to said main controller which provides display data indicating whether or not a position of said at least one electrode is satisfactory.  
 
 
     
     
         23 . The method of  claim 22  further comprising the step of: 
 configuring said high voltage apparatus to comprise: 
 an encoder connected to said at least one electrode through a first extension rod;  
 a motor connected to a second extension rod;  
 a chain which is located about said first and second extension rods; and  
 a high voltage controller comprising a DC input signal module, wherein said signal module device is connected to said encoder.  
 
 
     
     
         24 . The method of  claim 23  further comprising the step of: 
 configuring said electrode position monitor to comprise: 
 a fiber optical cable connecting said high voltage apparatus to said main controller; and  
 a resistor located between said main controller and said display device, wherein said main controller comprises a DC output module.  
 
 
     
     
         25 . The method of  claim 24  wherein said display device comprises an LED display device.  
     
     
         26 . The method of  claim 15  further comprising the steps of: 
 associating a motor with said etcher and said electrode position monitor.  
 connecting an encoder to said at least one electrode and which communicates with said motor;  
 associating a gear assembly with said motor and said at least one electrode.  
 
     
     
         27 . The method of  claim 15  wherein said etcher comprises a scanning-type etcher.  
     
     
         28 . The method of  claim 15  further comprising the steps of: 
 configuring said etch head to comprise at least two tubes for gas suction; and  
 locating said at least two tubes external to said etch head.