Ferroelectric integrated circuit having hydrogen barrier layer

Abstract

A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of metal oxide material in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following nitrides: aluminum titanium nitride (Al 2 Ti 3 N 6 ), aluminum silicon nitride (Al 2 Si 3 N 6 ), aluminum niobium nitride (AlNb 3 N 6 ), aluminum tantalum nitride (AlTa 3 N 6 ), aluminum copper nitride (Al 2 Cu 3 N 4 ), tungsten nitride (WN), and copper nitride (Cu 3 N 2 ). The thin film of metal oxide is ferroelectric or high-dielectric, nonferroelectric material. Preferably, the metal oxide comprises ferroelectric layered superlattice material. Preferably, the hydrogen barrier layer is located directly over the thin film of metal oxide.

We claim:  
     
         1 . An integrated circuit comprising: 
 a thin film of metal oxide material; and    a hydrogen barrier layer, said hydrogen barrier layer located to inhibit the diffusion of hydrogen to said thin film of metal oxide material, and said hydrogen barrier layer comprising a nitride of aluminum and another chemical element selected from the group consisting of silicon, titanium, tantalum, niobium, copper and tungsten.    
     
     
         2 . An integrated circuit as in  claim 1  wherein said hydrogen barrier layer is located directly over at least a portion of said thin film of metal oxide material.  
     
     
         3 . An integrated circuit as in  claim 1  wherein said hydrogen barrier layer is located laterally from said thin film of metal oxide material.  
     
     
         4 . An integrated circuit as in  claim 1  wherein said metal oxide material comprises nonferroelectric, high-dielectric constant material.  
     
     
         5 . An integrated circuit as in  claim 4  wherein said nonferroelectric, high-dielectric constant material comprises a layered superlattice material.  
     
     
         6 . An integrated circuit as in  claim 1  wherein said metal oxide material comprises ferroelectric material.  
     
     
         7 . An integrated circuit as in  claim 6  wherein said ferroelectric material comprises a layered superlattice material.  
     
     
         8 . An integrated circuit as in  claim 7  wherein said layered superlattice material comprises strontium, bismuth, and tantalum.  
     
     
         9 . An integrated circuit as in  claim 7  wherein said layered superlattice material comprises strontium, bismuth, tantalum and niobium in relative molar proportions corresponding to a stoichiometric formula SrBi 2.18 Ta 1.44 Nb 0.56 O 9 .  
     
     
         10 . An integrated circuit comprising: 
 a thin film of metal oxide material; and    a hydrogen barrier layer, said hydrogen barrier layer located to inhibit the diffusion of hydrogen to said thin film of metal oxide material, and said hydrogen barrier layer comprising a nitride of copper.    
     
     
         11 . An integrated circuit as in  claim 10  wherein said hydrogen barrier layer is located directly over at least a portion of said thin film of metal oxide material.  
     
     
         12 . An integrated circuit as in  claim 10  wherein said hydrogen barrier layer is located laterally from said thin film of metal oxide material.  
     
     
         13 . An integrated circuit as in  claim 10  wherein said metal oxide material comprises a nonferroelectric, high-dielectric constant material.  
     
     
         14 . An integrated circuit as in  claim 10  wherein said metal oxide material comprises a layered superlattice material.  
     
     
         15 . An integrated circuit as in  claim 10  wherein said metal oxide material comprises a ferroelectric material.  
     
     
         16 . An integrated circuit comprising: 
 a thin film of metal oxide material; and    a hydrogen barrier layer, said hydrogen barrier layer located to inhibit the diffusion of hydrogen to said thin film of metal oxide material, and said hydrogen barrier layer comprising a nitride of tungsten.    
     
     
         17 . An integrated circuit as in  claim 16  wherein said hydrogen barrier layer is located directly over at least a portion of said thin film of metal oxide material.  
     
     
         18 . An integrated circuit as in  claim 16  wherein said hydrogen barrier layer is located laterally from said thin film of metal oxide material.  
     
     
         19 . An integrated circuit as in  claim 16  wherein said metal oxide material comprises a nonferroelectric, high-dielectric constant material.  
     
     
         20 . An integrated circuit as in  claim 16  wherein said metal oxide material comprises a layered superlattice material.  
     
     
         21 . An integrated circuit as in  claim 16  wherein said metal oxide material comprises a ferroelectric material.