Assignee
SYMETRIX CORP
US·165 granted patents·12 pending applications·8,627 citations·filing 1989–2013
Top patents by PatentIndex Score
177 records- 0199US5119760AMethods and apparatus for material depositionSYMETRIX CORP·Filed 1990·Granted Jun 9, 1992·588 cites·20 claims
- 0298US7778063B2Non-volatile resistance switching memories and methods of making sameSYMETRIX CORP·Filed 2007·Granted Aug 17, 2010·248 cites·9 claims
- 0398US7639523B2Stabilized resistive switching memorySYMETRIX CORP·Filed 2007·Granted Dec 29, 2009·186 cites·12 claims
- 0498US7298640B21T1R resistive memory array with chained structureSYMETRIX CORP·Filed 2005·Granted Nov 20, 2007·135 cites·5 claims
- 0598US6110531AMethod and apparatus for preparing integrated circuit thin films by chemical vapor depositionSYMETRIX CORP·Filed 1997·Granted Aug 29, 2000·523 cites·31 claims
- 0698US5519234AFerroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage currentSYMETRIX CORP·Filed 1993·Granted May 21, 1996·441 cites·23 claims
- 0797US7872900B2Correlated electron memorySYMETRIX CORP·Filed 2007·Granted Jan 18, 2011·135 cites·4 claims
- 0897US5561307AFerroelectric integrated circuitSYMETRIX CORP·Filed 1994·Granted Oct 1, 1996·208 cites·9 claims
- 0996US6511718B1Method and apparatus for fabrication of thin films by chemical vapor depositionSYMETRIX CORP·Filed 1998·Granted Jan 28, 2003·191 cites·25 claims
- 1096US6236076B1Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient materialSYMETRIX CORP·Filed 1999·Granted May 22, 2001·148 cites·29 claims
- 1195US6198225B1Ferroelectric flat panel displaysSYMETRIX CORP·Filed 1999·Granted Mar 6, 2001·109 cites·52 claims
- 1295US5523964AFerroelectric non-volatile memory unitSYMETRIX CORP·Filed 1994·Granted Jun 4, 1996·111 cites·21 claims
- 1394US6370056B1Ferroelectric memory and method of operating sameSYMETRIX CORP·Filed 2000·Granted Apr 9, 2002·88 cites·26 claims
- 1494US6365927B1Ferroelectric integrated circuit having hydrogen barrier layerSYMETRIX CORP·Filed 2000·Granted Apr 2, 2002·76 cites·21 claims
- 1594US6051858AFerroelectric/high dielectric constant integrated circuit and method of fabricating sameSYMETRIX CORP·Filed 1997·Granted Apr 18, 2000·125 cites·10 claims
- 1694US5466629AProcess for fabricating ferroelectric integrated circuitSYMETRIX CORP·Filed 1995·Granted Nov 14, 1995·134 cites·6 claims
- 1793US6809949B2Ferroelectric memorySYMETRIX CORP·Filed 2002·Granted Oct 26, 2004·85 cites·41 claims
- 1893US6258733B1Method and apparatus for misted liquid source deposition of thin film with reduced mist particle sizeSYMETRIX CORP·Filed 2000·Granted Jul 10, 2001·60 cites·6 claims
- 1992US7075134B2Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the sameSYMETRIX CORP·Filed 2003·Granted Jul 11, 2006·57 cites·60 claims
- 2092US5614252AMethod of fabricating barium strontium titanateSYMETRIX CORP·Filed 1995·Granted Mar 25, 1997·129 cites·18 claims
- 2192US5456945AMethod and apparatus for material depositionSYMETRIX CORP·Filed 1992·Granted Oct 10, 1995·139 cites·29 claims
- 2292US5138520AMethods and apparatus for material depositionSYMETRIX CORP·Filed 1989·Granted Aug 11, 1992·104 cites·23 claims
- 2391US6781184B2Barrier layers for protecting metal oxides from hydrogen degradationSYMETRIX CORP·Filed 2001·Granted Aug 24, 2004·48 cites·53 claims
- 2491US5434102AProcess for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 1993·Granted Jul 18, 1995·109 cites·44 claims
- 2590US6151241AFerroelectric memory with disturb protectionSYMETRIX CORP·Filed 1999·Granted Nov 21, 2000·83 cites·20 claims
- 2690US5699035AZnO thin-film varistors and method of making the sameSYMETRIX CORP·Filed 1995·Granted Dec 16, 1997·104 cites·8 claims
- 2790US5559733AMemory with ferroelectric capacitor connectable to transistor gateSYMETRIX CORP·Filed 1995·Granted Sep 24, 1996·68 cites·4 claims
- 2889US6225656B1Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating sameSYMETRIX CORP·Filed 1998·Granted May 1, 2001·74 cites·46 claims
- 2989US5759923AMethod and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuitsSYMETRIX CORP·Filed 1996·Granted Jun 2, 1998·102 cites·18 claims
- 3088US6686489B2Metal organic precursors for transparent metal oxide thin films and method of making sameSYMETRIX CORP·Filed 2001·Granted Feb 3, 2004·16 cites·17 claims
- 3188US6495878B1Interlayer oxide containing thin films for high dielectric constant applicationSYMETRIX CORP·Filed 1999·Granted Dec 17, 2002·64 cites·36 claims
- 3288US6140672AFerroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitorSYMETRIX CORP·Filed 1999·Granted Oct 31, 2000·97 cites·22 claims
- 3388US5540772AMisted deposition apparatus for fabricating an integrated circuitSYMETRIX CORP·Filed 1994·Granted Jul 30, 1996·100 cites·25 claims
- 3488US5406510ANon-volatile memorySYMETRIX CORP·Filed 1993·Granted Apr 11, 1995·68 cites·19 claims
- 3587US6830623B2Method of liquid deposition by selection of liquid viscosity and other precursor propertiesSYMETRIX CORP·Filed 2002·Granted Dec 14, 2004·32 cites·14 claims
- 3687US6326315B1Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 2000·Granted Dec 4, 2001·43 cites·27 claims
- 3787US5468684AIntegrated circuit with layered superlattice material and method of fabricating sameSYMETRIX CORP·Filed 1993·Granted Nov 21, 1995·110 cites·46 claims
- 3886US8816719B2Re-programmable antifuse FPGA utilizing resistive CeRAM elementsSYMETRIX CORP·Filed 2013·Granted Aug 26, 2014·8 cites·28 claims
- 3986US6831313B2Ferroelectric composite material, method of making same and memory utilizing sameSYMETRIX CORP·Filed 2002·Granted Dec 14, 2004·34 cites·14 claims
- 4086US6203619B1Multiple station apparatus for liquid source fabrication of thin filmsSYMETRIX CORP·Filed 1998·Granted Mar 20, 2001·78 cites·20 claims
- 4186US5708302ABottom electrode structure for dielectric capacitorsSYMETRIX CORP·Filed 1995·Granted Jan 13, 1998·65 cites·20 claims
- 4286US5463244AAntifuse programmable element using ferroelectric materialSYMETRIX CORP·Filed 1994·Granted Oct 31, 1995·104 cites·22 claims
- 4385US6787181B2Chemical vapor deposition method of making layered superlattice materials using trimethylbismuthSYMETRIX CORP·Filed 2001·Granted Sep 7, 2004·34 cites·23 claims
- 4485US6541279B2Method for forming an integrated circuitSYMETRIX CORP·Filed 2001·Granted Apr 1, 2003·24 cites·41 claims
- 4585US6395612B1Semiconductor device and method of manufacturing the sameSYMETRIX CORP·Filed 2000·Granted May 28, 2002·40 cites·5 claims
- 4685US5962085AMisted precursor deposition apparatus and method with improved mist and mist flowSYMETRIX CORP·Filed 1996·Granted Oct 5, 1999·75 cites·56 claims
- 4784US6537830B1Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric materialSYMETRIX CORP·Filed 2000·Granted Mar 25, 2003·31 cites·34 claims
- 4884US6404003B1Thin film capacitors on silicon germanium substrateSYMETRIX CORP·Filed 1999·Granted Jun 11, 2002·46 cites·26 claims
- 4984US5648114AChemical vapor deposition process for fabricating layered superlattice materialsSYMETRIX CORP·Filed 1993·Granted Jul 15, 1997·85 cites·16 claims
- 5084US5514822APrecursors and processes for making metal oxidesSYMETRIX CORP·Filed 1993·Granted May 7, 1996·70 cites·22 claims
Showing the top 50 of 177 patent records by PatentIndex Score.
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