Inventor · disambiguated record
Yukimasa Koishikawa
Also filed as: KOISHIKAWA YUKIMASA
8 granted patents·1 pending application·129 citations·filing 1992–2002
88Inventor score
Top patents by PatentIndex Score
9 records- 0180US5351162AHigh power MOS device with protective circuit against overcurrent or the likeNEC CORP·Filed 1992·Granted Sep 27, 1994·39 cites·6 claims
- 0273US6436767B1Semiconductor memory device and process for manufacturing the sameNEC CORP·Filed 2000·Granted Aug 20, 2002·14 cites·12 claims
- 0370US5633521AEnhancement of breakdown voltage in MOSFET semiconductor deviceNEC CORP·Filed 1996·Granted May 27, 1997·33 cites·8 claims
- 0467US6429480B1Semiconductor device having nonvolatile memory cell and field effect transistorNEC CORP·Filed 2000·Granted Aug 6, 2002·10 cites·9 claims
- 0560US6703662B1Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2000·Granted Mar 9, 2004·10 cites·3 claims
- 0652US6613631B2Method of forming a non-volatile semiconductor memory device with a tunnel barrier film defined by side wallsNEC ELECTRONICS CORP·Filed 2000·Granted Sep 2, 2003·6 cites·13 claims
- 0751US6632715B2Semiconductor device having nonvolatile memory cell and field effect transistorNEC ELECTRONICS CORP·Filed 2002·Granted Oct 14, 2003·4 cites·12 claims
- 0849US5763927AHigh-voltage lateral field effect transistor having auxiliary drain electrode for a step-down drain voltageNEC CORP·Filed 1997·Granted Jun 9, 1998·13 cites·8 claims
- 0935US2002125544A1Semiconductor memory device with sidewallsNEC CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →