Inventor · disambiguated record
Ger-Pin Lin
Also filed as: LIN GER-PIN
15 granted patents·13 pending applications·38 citations·filing 2010–2020
88Inventor score
Files withUNITED MICROELECTRONICS CORP19ADVANCED ION BEAM TECH INC3YANG CHAN-LON3CHEN SHENG-CHI1HUANG HSIN-FU1
Top patents by PatentIndex Score
28 records- 0195US9450078B1Forming punch-through stopper regions in finFET devicesADVANCED ION BEAM TECH INC·Filed 2015·Granted Sep 20, 2016·20 cites·28 claims
- 0293US10217750B1Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 26, 2019·9 cites·4 claims
- 0385US10497704B2Buried word line structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 3, 2019·3 cites·9 claims
- 0474US10056288B1Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·2 cites·7 claims
- 0572US10658365B2Semiconductor device and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 19, 2020·1 cites·3 claims
- 0668US10608086B2Semiconductor structure with diffusion barrier region and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 31, 2020·1 cites·17 claims
- 0760US9431247B2Method for ion implantationADVANCED ION BEAM TECH INC·Filed 2015·Granted Aug 30, 2016·1 cites·14 claims
- 0859US10861855B2Semiconductor device and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Dec 8, 2020·0 cites·11 claims
- 0959US10847517B2Method for forming semiconductor device having a multi-thickness gate trench dielectric layerUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 24, 2020·0 cites·8 claims
- 1059US8921206B2Semiconductor processYANG CHAN-LON·Filed 2011·Granted Dec 30, 2014·1 cites·18 claims
- 1155US10373958B2Semiconductor device having a multi-thickness gate trench dielectric layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 6, 2019·0 cites·9 claims
- 1249US10332889B2Method of manufacturing a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 25, 2019·0 cites·10 claims
- 1347US8536072B2Semiconductor processYANG CHAN-LON·Filed 2012·Granted Sep 17, 2013·0 cites·28 claims
- 1447US2013337622A1Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 1544US9748072B2Lower dose rate ion implantation using a wider ion beamADVANCED ION BEAM TECH INC·Filed 2014·Granted Aug 29, 2017·0 cites·37 claims
- 1642US10056388B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·0 cites·9 claims
- 1741US2018226470A1Method of fabricating bottom electrodeUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 1841US2015104914A1Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1938US2013023103A1Method for fabricating semiconductor device by using stress memorization techniqueUNITED MICROELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 2038US2018211961A1Semiconductor memory device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2137US2018197868A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2237US2018182760A1Dielectric structure and manufacturing method thereof and memory structureUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2337US2012315734A1Method for fabricating semiconductor deviceYANG CHAN-LON·Filed 2011·Application pending·0 cites
- 2436US2019013204A1Method of fabricating buried word line and gate on finfetUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2535US2012256275A1Metal gate structure and manufacturing method thereofHUANG HSIN-FU·Filed 2011·Application pending·0 cites
- 2635US2018190661A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2730US2011104517A1Single-layered ferromagnetic recording film with perpendicular magnetic anisotropyCHEN SHENG-CHI·Filed 2010·Application pending·0 cites
- 2830US2011171494A1Discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropyLIN GER-PIN·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →