Inventor · disambiguated record
Hirokuni Asamizu
Also filed as: ASAMIZU HIROKUNI
15 granted patents·4 pending applications·117 citations·filing 2000–2020
93Inventor score
Top patents by PatentIndex Score
19 records- 0198US8835959B2Transparent light emitting diodesUNIV CALIFORNIA·Filed 2012·Granted Sep 16, 2014·33 cites·28 claims
- 0297US10217916B2Transparent light emitting diodesUNIV CALIFORNIA·Filed 2014·Granted Feb 26, 2019·19 cites·26 claims
- 0395US10658557B1Transparent light emitting device with light emitting diodesUNIV CALIFORNIA·Filed 2019·Granted May 19, 2020·7 cites·2 claims
- 0493US8368109B2Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiencyUNIV CALIFORNIA·Filed 2011·Granted Feb 5, 2013·9 cites·18 claims
- 0591US10323335B2SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor deviceROHM CO LTD·Filed 2018·Granted Jun 18, 2019·5 cites·19 claims
- 0691US8294166B2Transparent light emitting diodesNAKAMURA SHUJI·Filed 2007·Granted Oct 23, 2012·14 cites·42 claims
- 0787US8124991B2Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiencyISO KENJI·Filed 2008·Granted Feb 28, 2012·14 cites·22 claims
- 0886US10454010B1Transparent light emitting diodesUNIV CALIFORNIA·Filed 2019·Granted Oct 22, 2019·2 cites·2 claims
- 0976US8193079B2Method for conductivity control of (Al,In,Ga,B)NKAEDING JOHN F·Filed 2007·Granted Jun 5, 2012·4 cites·30 claims
- 1075US10570529B2SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor deviceROHM CO LTD·Filed 2019·Granted Feb 25, 2020·1 cites·19 claims
- 1170US10644213B1Filament LED light bulbUNIV CALIFORNIA·Filed 2019·Granted May 5, 2020·0 cites·2 claims
- 1270US10593854B1Transparent light emitting device with light emitting diodesUNIV CALIFORNIA·Filed 2019·Granted Mar 17, 2020·0 cites·6 claims
- 1369US10876220B2SiC epitaxial wafer, manufacturing apparatus of SiC epitaxial wafer, fabrication method of SiC epitaxial wafer, and semiconductor deviceROHM CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·10 claims
- 1462US2019273194A1Transparent light emitting diodesUNIV CALIFORNIA·Filed 2019·Application pending·0 cites
- 1561US6365969B1Ohmic electrode, method of manufacturing the same and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Apr 2, 2002·9 cites·20 claims
- 1655US2014191244A1METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)NUNIV CALIFORNIA·Filed 2014·Application pending·0 cites
- 1753US8709925B2Method for conductivity control of (Al,In,Ga,B)NKAEDING JOHN F·Filed 2012·Granted Apr 29, 2014·0 cites·24 claims
- 1846US2008283854A1Light emitting diode device layer structure using an indium gallium nitride contact layerUNIV CALIFORNIA·Filed 2008·Application pending·0 cites
- 1932US2016064488A1Nitride based semiconductor deviceROHM CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →