Inventor · disambiguated record
Simon Ruffell
Also filed as: RUFFELL SIMON
29 granted patents·6 pending applications·86 citations·filing 2007–2023
95Inventor score
Files withVARIAN SEMICONDUCTOR EQUIPMENT ASS INC22APPLIED MATERIALS INC7VARIAN SEMICONDUCTOR EQUIPMENT4EVANS MORGAN D1WRIOTA PTY LTD1
Top patents by PatentIndex Score
35 records- 0197US11908691B2Techniques to engineer nanoscale patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2022·Granted Feb 20, 2024·3 cites·7 claims
- 0297US11488823B2Techniques to engineer nanoscale patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2021·Granted Nov 1, 2022·4 cites·19 claims
- 0395US8846508B1Method of implanting high aspect ratio featuresVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Sep 30, 2014·23 cites·18 claims
- 0494US11043380B2Techniques to engineer nanoscale patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jun 22, 2021·7 cites·10 claims
- 0594US9984889B2Techniques for manipulating patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted May 29, 2018·11 cites·17 claims
- 0694US9589811B2FinFET spacer etch with no fin recess and no gate-spacer pull-downVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Mar 7, 2017·10 cites·16 claims
- 0792US10008384B2Techniques to engineer nanoscale patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Jun 26, 2018·6 cites·16 claims
- 0884US10971368B2Techniques for processing substrates using directional reactive ion etchingVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Apr 6, 2021·3 cites·13 claims
- 0984US9287123B2Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor filmsVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2014·Granted Mar 15, 2016·4 cites·20 claims
- 1082US11646213B2Multi-zone platen temperature controlAPPLIED MATERIALS INC·Filed 2020·Granted May 9, 2023·1 cites·13 claims
- 1181US10222202B2Three dimensional structure fabrication control using novel processing systemVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Mar 5, 2019·2 cites·16 claims
- 1280US11127593B2Techniques and apparatus for elongation patterning using angled ion beamsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Sep 21, 2021·2 cites·10 claims
- 1380US10381232B2Techniques for manipulating patterned features using ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Aug 13, 2019·2 cites·17 claims
- 1478US9934981B2Techniques for processing substrates using directional reactive ion etchingVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Apr 3, 2018·3 cites·8 claims
- 1573US2020090909A1Filling a cavity in a substrate using sputtering and depositionVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2019·Application pending·0 cites
- 1671US9453279B2Method for selectively depositing a layer on a three dimensional structureVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Sep 27, 2016·1 cites·8 claims
- 1770US2023223269A1Techniques and apparatus for unidirectional hole elongation using angled ion beamsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1870US2023238264A1Multi-Zone Platen Temperature ControlAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1969US10229832B2Techniques for forming patterned features using directional ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted Mar 12, 2019·1 cites·19 claims
- 2067US10204909B2Non-uniform gate oxide thickness for DRAM deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Feb 12, 2019·1 cites·14 claims
- 2167US9929015B2High efficiency apparatus and method for depositing a layer on a three dimensional structureVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Mar 27, 2018·1 cites·15 claims
- 2264US10546730B2Filling a cavity in a substrate using sputtering and depositionVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted Jan 28, 2020·0 cites·12 claims
- 2363US2021375626A1Techniques and apparatus for elongation patterning using angled ion beamsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2021·Application pending·0 cites
- 2462US11664193B2Temperature controlled/electrically biased wafer surroundAPPLIED MATERIALS INC·Filed 2021·Granted May 30, 2023·0 cites·19 claims
- 2561US11640909B2Techniques and apparatus for unidirectional hole elongation using angled ion beamsAPPLIED MATERIALS INC·Filed 2019·Granted May 2, 2023·0 cites·16 claims
- 2661US9023722B2Compound semiconductor growth using ion implantationEVANS MORGAN D·Filed 2012·Granted May 5, 2015·1 cites·19 claims
- 2759US9847228B2Method for selectively depositing a layer on a three dimensional structureVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted Dec 19, 2017·0 cites·14 claims
- 2858US12106943B2Substrate halo arrangement for improved process uniformityAPPLIED MATERIALS INC·Filed 2021·Granted Oct 1, 2024·0 cites·9 claims
- 2955US10665421B2In-situ beam profile metrologyAPPLIED MATERIALS INC·Filed 2018·Granted May 26, 2020·0 cites·32 claims
- 3053US10109494B2FinFet spacer etch with no fin recess and no gate-spacer pull-downVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Oct 23, 2018·0 cites·18 claims
- 3152US9082949B2Magnetic memory and method of fabricationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Jul 14, 2015·0 cites·6 claims
- 3252US8946836B2Magnetic memory and method of fabricationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Feb 3, 2015·0 cites·9 claims
- 3344US2010084613A1Semiconductor doping processWRIOTA PTY LTD·Filed 2007·Application pending·0 cites
- 3440US2019272983A1Substrate halo arrangement for improved process uniformityVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Application pending·0 cites
- 3525US10280512B2Apparatus and method for carbon film deposition profile controlVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted May 7, 2019·0 cites·16 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →