Techniques and apparatus for elongation patterning using angled ion beams

Abstract

A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.

What is claimed is: 
     
         1 . A system, comprising:
 a transfer chamber, the transfer chamber arranged to transport a substrate between a plurality of locations;   a first angled ion beam chamber, the first angled ion beam chamber coupled to the transfer chamber, to direct a first angled ion beam to the substrate;   a vertical etch chamber, the vertical etch chamber coupled to the transfer chamber, to supply vertical ions to the substrate; and   a second angled ion beam chamber, the second angled ion beam chamber coupled to the transfer chamber, to direct a second angled ion beam to the substrate.   
     
     
         2 . The system of  claim 1 , wherein the first angled ion beam chamber is adapted to direct a first angled ion beam in a first reactive ambient, along a first trajectory at a first non-zero angle of incidence with respect to a perpendicular to a plane of the substrate,
 and wherein the first angled ion beam chamber is adapted to direct the second angled ion beam in a second reactive ambient, along a second trajectory at a second non-zero angle of incidence with respect to the perpendicular to the plane of the substrate.   
     
     
         3 . The system of  claim 1 , wherein the vertical etch chamber comprises a reactive ion etch chamber. 
     
     
         4 . The system of  claim 1 , wherein the transfer chamber, the first angled ion beam chamber, the vertical etch chamber, and the second angled ion beam chamber are maintained at vacuum and for allowing the substrate to be transported therebetween without being exposed to ambient pressure. 
     
     
         5 . An apparatus, comprising:
 a plasma chamber coupled to receive power from a power supply;   a process chamber, electrically coupled to the plasma chamber via a bias supply, the process chamber further including a substrate stage;   an extraction plate, disposed between the plasma chamber and process chamber, and defining an angled ion beam; and   a controller, coupled to at least one of: the power supply, the bias supply, and the substrate stage, the controller comprising:
 a processor; and 
 a memory unit coupled to the processor, including an ion beam control routine, the ion beam control routine operative on the processor to control the angled ion beam, the ion beam control routine comprising an angle control processor to:
 receive an endpoint signal; and 
 send a control signal to adjust operation of at least one of the power supply, bias supply, and substrate stage, based upon the endpoint signal. 
 
   
     
     
         6 . The apparatus of  claim 5 , further comprising a gas manifold coupled to the plasma chamber, the ion beam control routine further comprising a gas flow processor, the gas flow processor to:
 adjust a flow of at least one gas from the gas manifold based upon the endpoint signal, wherein a gas composition in the plasma chamber is changed.   
     
     
         7 . The apparatus of  claim 4 , wherein the angle control processor is adapted to adjust operating parameters affecting an angle of incidence of the angled ion beam on a substrate disposed on the substrate stage based upon the endpoint signal. 
     
     
         8 . The apparatus of  claim 7 , wherein the operating parameters include at least one of a plasma power, a bias voltage between the plasma chamber and the substrate, and a separation between the extraction plate and the substrate. 
     
     
         9 . The apparatus of  claim 5 , wherein the memory unit includes a database containing details of process parameters to be applied to etch operations to be performed for a given sequence of angled ion beam etch operations.