Inventor · disambiguated record
Pin-Chin Connie Wang
Also filed as: WANG PIN-CHIN C · WANG PIN-CHIN CONNIE
53 granted patents·2 pending applications·1,385 citations·filing 1998–2003
99Inventor score
Top patents by PatentIndex Score
55 records- 0195US6447933B1Formation of alloy material using alternating depositions of alloy doping element and bulk materialADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 10, 2002·115 cites·25 claims
- 0295US6190752B1Thin films having rock-salt-like structure deposited on amorphous surfacesUNIV LELAND STANFORD JUNIOR·Filed 1998·Granted Feb 20, 2001·143 cites·61 claims
- 0394US6518167B1Method of forming a metal or metal nitride interface layer between silicon nitride and copperADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 11, 2003·81 cites·20 claims
- 0494US6346479B1Method of manufacturing a semiconductor device having copper interconnectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 12, 2002·85 cites·17 claims
- 0592US6228759B1Method of forming an alloy precipitate to surround interconnect to minimize electromigrationADVANCED MICRO DEVICES INC·Filed 2000·Granted May 8, 2001·69 cites·14 claims
- 0691US6566248B1Graphoepitaxial conductor cores in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·72 cites·20 claims
- 0789US6664185B1Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnectADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 16, 2003·45 cites·12 claims
- 0889US6548395B1Method of promoting void free copper interconnectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 15, 2003·52 cites·20 claims
- 0988US6207552B1Forming and filling a recess in interconnect for encapsulation to minimize electromigrationADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 27, 2001·51 cites·12 claims
- 1087US6534865B1Method of enhanced fill of vias and trenchesADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 18, 2003·37 cites·10 claims
- 1187US6525425B1Copper interconnects with improved electromigration resistance and low resistivityADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 25, 2003·37 cites·23 claims
- 1287US6433402B1Selective copper alloy depositionADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 13, 2002·47 cites·6 claims
- 1386US6387806B1Filling an interconnect opening with different types of alloys to enhance interconnect reliabilityADVANCED MICRO DEVICES INC·Filed 2000·Granted May 14, 2002·47 cites·16 claims
- 1482US6674170B1Barrier metal oxide interconnect cap in integrated circuitsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 6, 2004·33 cites·8 claims
- 1582US6528412B1Depositing an adhesion skin layer and a conformal seed layer to fill an interconnect openingADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 4, 2003·35 cites·17 claims
- 1681US6831003B1Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigrationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 14, 2004·29 cites·14 claims
- 1781US6663787B1Use of ta/tan for preventing copper contamination of low-k dielectric layersADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 16, 2003·32 cites·9 claims
- 1880US6555909B1Seedless barrier layers in integrated circuits and a method of manufacture thereforADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·25 cites·15 claims
- 1978US6309959B1Formation of self-aligned passivation for interconnect to minimize electromigrationADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 30, 2001·28 cites·19 claims
- 2077US6469385B1Integrated circuit with dielectric diffusion barrier layer formed between interconnects and interlayer dielectric layersADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 22, 2002·20 cites·8 claims
- 2174US6590288B1Selective deposition in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 8, 2003·16 cites·9 claims
- 2274US6531780B1Via formation in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 11, 2003·20 cites·9 claims
- 2374US6426293B1Minimizing resistance and electromigration of interconnect by adjusting anneal temperature and amount of seed layer dopantADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 30, 2002·22 cites·28 claims
- 2474US6358840B1Forming and filling a recess in interconnect with alloy to minimize electromigrationADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 19, 2002·22 cites·17 claims
- 2571US6833625B1Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnectADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 21, 2004·14 cites·9 claims
- 2670US6417566B1Void eliminating seed layer and conductor core integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 9, 2002·16 cites·9 claims
- 2769US6841473B1Manufacturing an integrated circuit with low solubility metal-conductor interconnect capADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 11, 2005·13 cites·12 claims
- 2868US6642145B1Method of manufacturing an integrated circuit with a dielectric diffusion barrier layer formed between interconnects and interlayer dielectric layersADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 4, 2003·12 cites·10 claims
- 2968US6589408B1Non-planar copper alloy target for plasma vapor deposition systemsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 8, 2003·8 cites·20 claims
- 3067US6656836B1Method of performing a two stage anneal in the formation of an alloy interconnectADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·10 cites·20 claims
- 3164US6992004B1Implanted barrier layer to improve line reliability and method of forming sameADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 31, 2006·11 cites·29 claims
- 3264US6893955B1Manufacturing seedless barrier layers in integrated circuitsADVANCED MICRO DEVICES INC·Filed 2002·Granted May 17, 2005·9 cites·10 claims
- 3364US6861349B1Method of forming an adhesion layer with an element reactive with a barrier layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 1, 2005·11 cites·20 claims
- 3463US6621290B1Characterization of barrier layers in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 16, 2003·8 cites·16 claims
- 3563US6573179B1Forming a strong interface between interconnect and encapsulation to minimize electromigrationADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 3, 2003·11 cites·15 claims
- 3662US6541860B1Barrier-to-seed layer alloying in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2003·10 cites·9 claims
- 3761US6939803B2Method for forming conductor reservoir volume for integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 6, 2005·8 cites·6 claims
- 3861US6657303B1Integrated circuit with low solubility metal-conductor interconnect capADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 2, 2003·8 cites·10 claims
- 3960US6462417B1Coherent alloy diffusion barrier for integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 8, 2002·9 cites·18 claims
- 4059US6649034B1Electro-chemical metal alloying for semiconductor manufacturingADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 18, 2003·2 cites·20 claims
- 4159US6617176B1Method of determining barrier layer effectiveness for preventing metallization diffusion by forming a test specimen device and using a metal penetration measurement technique for fabricating a production semiconductor device and a test specimen device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 9, 2003·6 cites·20 claims
- 4259US6472757B2Conductor reservoir volume for integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 29, 2002·7 cites·6 claims
- 4358US7696092B2Method of using ternary copper alloy to obtain a low resistance and large grain size interconnectGLOBALFOUNDRIES INC·Filed 2001·Granted Apr 13, 2010·6 cites·19 claims
- 4458US6445070B1Coherent carbide diffusion barrier for integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 3, 2002·10 cites·27 claims
- 4556US6979903B1Integrated circuit with dielectric diffusion barrier layer formed between interconnects and interlayer dielectric layersADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 27, 2005·6 cites·16 claims
- 4653US6518185B1Integration scheme for non-feature-size dependent cu-alloy introductionADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 11, 2003·5 cites·12 claims
- 4753US6462416B1Gradated barrier layer in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 8, 2002·5 cites·10 claims
- 4852US6815340B1Method of forming an electroless nucleation layer on a via bottomADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 9, 2004·3 cites·18 claims
- 4951US7169706B2Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper depositionADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 30, 2007·4 cites·20 claims
- 5051US6455938B1Integrated circuit interconnect shunt layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 24, 2002·4 cites·14 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →