Inventor · disambiguated record
Emmanuel Richard
Also filed as: RICHARD EMMANUEL
5 granted patents·3 pending applications·40 citations·filing 2000–2018
72Inventor score
Files withST MICROELECTRONICS CROLLES 23ST MICROELECTRONICS CROLLES 2 SAS2COMMISSARIAT ENERGIE ATOMIQUE1IMEC INTER UNI MICRO ELECTR1STMICROELECTRONICS ROUSSET1
Top patents by PatentIndex Score
8 records- 0184US9929146B2Method of forming MOS and bipolar transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Granted Mar 27, 2018·4 cites·18 claims
- 0281US6495453B1Method for improving the quality of a metal layer deposited from a plating bathIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted Dec 17, 2002·36 cites·15 claims
- 0352US10381344B2Method of forming MOS and bipolar transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Aug 13, 2019·0 cites·13 claims
- 0447US2015097241A1Method for relaxing the transverse mechanical stresses within the active region of a mos transistor, and corresponding integrated circuitST MICROELECTRONICS CROLLES 2·Filed 2014·Application pending·0 cites
- 0546US8877600B2Method for manufacturing a hybrid SOI/bulk semiconductor waferST MICROELECTRONICS CROLLES 2·Filed 2013·Granted Nov 4, 2014·0 cites·8 claims
- 0644US10332808B2Device comprising multiple gate structures and method of simultaneously manufacturing different transistorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jun 25, 2019·0 cites·20 claims
- 0741US2016099183A1Method for relaxing the transverse mechanical stresses within the active region of a mos transistor, and corresponding integrated circuitST MICROELECTRONICS CROLLES 2·Filed 2015·Application pending·0 cites
- 0836US2017317106A1Mos transistor structure, in particular for high voltages using a technology of the silicon-on-insulator typeSTMICROELECTRONICS ROUSSET·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →