Inventor · disambiguated record
Chun-I Hsieh
Also filed as: HSIEH CHUN-I
18 granted patents·6 pending applications·25 citations·filing 2008–2022
90Inventor score
Files withNANYA TECHNOLOGY CORP10HSIEH CHUN-I7MICRON TECHNOLOGY INC3HUANG TSAI YU2GLOBALFOUNDRIES SG PTE LTD1
Top patents by PatentIndex Score
24 records- 0192US8564095B2Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating sameHUANG TSAI-YU·Filed 2011·Granted Oct 22, 2013·10 cites·17 claims
- 0282US8748283B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 10, 2014·3 cites·21 claims
- 0381US8901527B2Resistive random access memory structure with tri-layer resistive stackHSIEH CHUN-I·Filed 2010·Granted Dec 2, 2014·4 cites·6 claims
- 0469US8921977B2Capacitor array and method of fabricating the sameHUANG JEN JUI·Filed 2011·Granted Dec 30, 2014·4 cites·13 claims
- 0567US8999733B2Method of forming RRAM structureNANYA TECHNOLOGY CORP·Filed 2014·Granted Apr 7, 2015·1 cites·5 claims
- 0665US12388006B2Capacitor and airgap structureGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Aug 12, 2025·0 cites·17 claims
- 0762US9070871B2Method for fabricating magnetoresistive random access memory elementNANYA TECHNOLOGY CORP·Filed 2014·Granted Jun 30, 2015·0 cites·10 claims
- 0861US9159731B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 13, 2015·0 cites·20 claims
- 0960US8916392B2Magnetoresistive random access memory element and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2013·Granted Dec 23, 2014·0 cites·10 claims
- 1060US8487290B2RRAM with improved resistance transformation characteristic and method of making the sameHSIEH CHUN-I·Filed 2008·Granted Jul 16, 2013·2 cites·16 claims
- 1159US8936991B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2014·Granted Jan 20, 2015·0 cites·19 claims
- 1257US8535954B2Magnetoresistive random access memory element and fabrication method thereofHSIEH CHUN-I·Filed 2012·Granted Sep 17, 2013·0 cites·10 claims
- 1355US9202860B2Method for fabricating capacitor having rutile titanium oxide dielectric filmNANYA TECHNOLOGY CORP·Filed 2014·Granted Dec 1, 2015·0 cites·7 claims
- 1455US9153640B2Process for forming a capacitor structure with rutile titanium oxide dielectric filmNANYA TECHNOLOGY CORP·Filed 2014·Granted Oct 6, 2015·0 cites·10 claims
- 1555US8089060B2Non-volatile memory cell and fabrication method thereofHSIEH CHUN-I·Filed 2009·Granted Jan 3, 2012·1 cites·29 claims
- 1652US8149614B2Magnetoresistive random access memory element and fabrication method thereofHSIEH CHUN-I·Filed 2010·Granted Apr 3, 2012·0 cites·11 claims
- 1751US7943917B2Non-volatile memory cell and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2009·Granted May 17, 2011·0 cites·8 claims
- 1850US2014131835A1Semiconductor device with rutile titanium oxide dielectric filmNANYA TECHNOLOGY CORP·Filed 2012·Application pending·0 cites
- 1947US2014185182A1Semiconductor device with rutile titanium oxide dielectric filmNANYA TECHNOLOGY CORP·Filed 2013·Application pending·0 cites
- 2046US2009311878A1Method for depositing a dielectric materialNANYA TECHNOLOGY CORP·Filed 2008·Application pending·0 cites
- 2145US8659869B2Method for forming rutile titanium oxide and the stacking structure thereofHSIEH CHUN I·Filed 2012·Granted Feb 25, 2014·0 cites·18 claims
- 2244US2010021626A1Method of fabricating rramHSIEH CHUN-I·Filed 2008·Application pending·0 cites
- 2341US2009283856A1Method for fabricating a semiconductor capacitpr deviceHUANG TSAI-YU·Filed 2008·Application pending·0 cites
- 2437US2011084248A1Cross point memory array devicesNANYA TECHNOLOGY CORP·Filed 2009·Application pending·0 cites
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