Semiconductor device with rutile titanium oxide dielectric film

Abstract

A capacitor structure includes a first electrode on a substrate; a TiO2 dielectric layer directly on the first electrode, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. Template layer, seed layer or pretreated layer is not required between the first electrode and the TiO2 dielectric layer. Besides, impurity doping is not required for the TiO2 dielectric layer.

What is claimed is: 
     
         1 . A capacitor structure comprising:
 a first electrode on a substrate;   a titanium oxide (TiO2) dielectric layer directly on the first electrode, wherein the TiO2 dielectric layer has substantially only rutile phase; and   a second electrode on the TiO2 dielectric layer.   
     
     
         2 . The capacitor structure according to  claim 1  wherein there is no template layer provided between the first electrode and the TiO2 dielectric layer. 
     
     
         3 . The capacitor structure according to  claim 1  wherein there is no seed layer provided between the first electrode and the TiO2 dielectric layer. 
     
     
         4 . The capacitor structure according to  claim 1  wherein there is no pre-treated layer provided between the first electrode and the TiO2 dielectric layer. 
     
     
         5 . The capacitor structure according to  claim 1  further comprising a dielectric layer provided between the TiO2 dielectric layer and the first electrode. 
     
     
         6 . The capacitor structure according to  claim 1  wherein the first electrode comprises Ru or TiN.